P-Channel Enhancement Mode MOSFET
SPP9435A
DESCRIPTION APPLICATIONS
z Power Management in Note book The SPP9435A is the P-Channel logic enhancement
mode power field effect transistors are produced using z Portable Equipment
z Battery Powered System high cell density , DMOS trench technology.
This high density process is especially tailored to z DC/DC Converter
z Load Switch
minimize on-state resistance.
z DSC
These devices are particularly suited for low voltage z LCD Display inverter application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES
-30V/-5.3A,RDS(ON)= 65mΩ@VGS=- 10V -30V/-4.2A,RDS(ON)= 100mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/ 06 / 20 Ver.1
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P-Channel Enhancement Mode MOSFET
SPP9435A
PIN DESCRIPTION Pin Symbol Description 1 S Source 2 S Source 3 S Source 4 G Gate Drain 5 D Drain 6 D Drain 7 D Drain 8 D ORDERING INFORMATION Part Number Package Part Marking SPP9435AS8RG SOP- 8P SPP9435AS8TG SOP- 8P ※ SPP9435AS8RG : 13” Tape Reel ; Pb – Free ※ SPP9435AS8TG : Tube ; Pb – Free SPP9435A SPP9435A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2007/ 06 / 20 Ver.1
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VDSS -30 VGSS ±20 TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA V V A -6.8 -4.6 -30 A -2.3 A 2.8 1.8 -55/150 -55/150 70 W ℃ ℃ ℃/W TA=25℃ TA=70℃ 元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
Parameter SymbolConditions Min. Typ Max.UnitSPP9435A
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSSVGS=0V,ID-250uA -30 V VGS(th)VDS=VGS,ID-250uA -1.0 -3.0 IGSS IDSS ID(on) VDS=0V,VGS±20V ±100 nAVDS=-24V,VGS0V -1 uAVDS=-24V,VGS=0V -5 TJ=85℃ VDS= -5V,VGS =-4.5V -10 A ==VGS==-10V,ID-5.3A 0.055 0.065RDS(on)Ω VGS=-4.5V,ID-4.2A 0.090 0.100gfs VDS=-15V,ID-5.7A 13 S =VSD IS=-2.0A,VGS =0V -0.8 -1.2 V ===Qg 27 32 VDS=-15V,VGS=-10V nCQgs 4 ID= -4.6A Qgd 6.5 Ciss VDS=-15V,VGS=0V Coss f=1MHz Crss 850 pF 150 85 td(on) 14 30 VDD=-15V,RL=15Ω 13 45 tr nS ID≡-1.0A,VGEN=-10V td(off) 56 100 RG=6Ω 30 90 tf 2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP9435A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP9435A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP9435A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP9435A
SOP- 8 PACKAGE OUTLINE 2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP9435A
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SYNC Power Corporation 9F-5, No.3-2, Park Street
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Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com
2007/ 06 / 20 Ver.1
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