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SL03N06Datasheet

2022-01-06 来源:好走旅游网
SL03N06

60V/3A N-Channel Advanced Power MOSFET

Features

♦Low On-Resistance ♦Fast Switching ♦High Effective

♦Lead-Free, RoHS Compliant

Description

SL03N06 designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Switch applications and a wide variety of other small power supply applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are

measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V

60 V V(BR)DSS Drain-Source Breakdown Voltage

TJ Maximum Junction Temperature 175 °C

TSTG Storage Temperature Range -55 to 155 °C

TC=25°C Diode Continuous Forward Current 3 A IS

Mounted on Large Heat Sink

IDM TC=25°C 12 A Pulse Drain Current Tested ①

TC=25°C 3 A Continuous Drain current@VGS=4.5V ② ID

P

TC=25°C 1.75 W Maximum Power Dissipation D

RθJA Thermal Resistance Junction-Ambient 155 °C/W

Page - 1 - Total 4

SL03N06

60V/3A N-Channel Advanced Power MOSFET

Symbol Parameter Condition Min. Typ. Max.Unit =

Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

V(BR)DSS IDSS IGSS VGS(TH) RDS(ON)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage

Drain-Source On-State Resistance② Forward Transconductance

VGS=0V ID=250μA 60 -- -- V VDS=60V,VGS0V -- -- 1 μA VDS=60V,VGS0V -- -- 100 μA VGS=±20V,VDS0VVDS=VGS,ID=250μA

-- -- ±100 nA 0.8 1.1 1.5 V VGS=4.5V, ID2A -- 95 105 mΩ VDS= 15V, ID1.8A

3 -- -- S gfs

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

Ciss Coss Crss Qg Qgs Qgd

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge

=

GS=0V, VDS=30V,V=f=1MHz

==

=

VDS=30V,ID=1A, VGS=4.5V

-- 250 -- pF

-- 35 -- pF -- 20 -- pF --

6

--

nC

-- 1.2 -- nC -- 1.3 -- nC Switching Characteristics

td(on) tr td(off) tf

Turn-on Delay Time

VDD=30V,

Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time

ID=1A, RG=6.8Ω, VGS=4.5V

-- -- -- --

6 15 16 10

-- nS -- nS -- nS -- nS Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)

ISD VSD

Source-drain current(Body Diode) ② Forward on voltage

Tc=25℃ -- -- 3 A ISD=3A,VGS0V -- -- 1.2 V NOTE:

① Repetitive rating; pulse width limited by max. junction temperature. ② Pulse width ≤ 300μs; duty cycle≤ 2%.

Page - 2 - Total 4

SL03N06

60V/3A N-Channel Advanced Power MOSFET

Typical Characteristics

)A( tnerurC ecuroS-niarD ,DI VDS, Drain -Source Voltage (V)

Fig1. Typical Output Characteristics

)A( tnerurC ecuroS-niarD ,DI VGS, Gate -Source Voltage (V)

Fig3. Typical Transfer Characteristics V)( egatlVo ecruoS- etaG ,)HT(SGVTj - Junction Temperature (°C)

Fig9. Threshold Voltage Vs. Temperature

)A( tnerurC ecuroS-niarD ,DITc - Case Temperature (°C)

Fig2. Maximum Drain Current Vs.Case Temperature

ecnatsiseR nO dezilamroN Tj - Junction Temperature (°C)

Fig4. Normalized On-Resistance Vs. Temperature

)A( tnerruC niarD - DI V

DS, Drain -Source Voltage (V)

Fig6. Maximum Safe Operating Area

Page - 3 - Total 4

SL03N06

60V/3A N-Channel Advanced Power MOSFET

ISD, Reverse Drain Current (A) VSD, Source-Drain Voltage (V)

Fig7. Typical Source-Drain Diode Forward Voltage

C, Capacitance (pF) VDS , Drain-Source Voltage (V)

Fig8. Typical Capacitance Vs.Drain-Source Voltage

SOT23 Mechanical Data

Order Information

Product

Marking

Package

Packaging

Min Unit Quantity

6000

SL03N06 V36A SOT23 3000/Reel

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