专利名称：Structures and methods for measuring
beam angle in an ion implanter
发明人：Leonard M. Rubin,Ivan Berry,Walter Class申请号：US11947632申请日：20071129公开号：US07728293B2公开日：20100601
专利附图：
摘要：The present invention involves an ion beam angular measurement apparatus forproviding feedback for a predetermined set ion beam angle comprising an arrangementof composite pillars formed on an insulating material and wherein the composite pillars
selectively allow ion beams to penetrate a first layer of a pillar, wherein resistivity
measurements are taken for each of the composite pillars before and after test ion beamimplantation and wherein the resistivity measurements yield information relating to anangle of the ion beam during test.
申请人：Leonard M. Rubin,Ivan Berry,Walter Class
地址：South Hamilton MA US,Amesbury MA US,West Newbury MA US
国籍：US,US,US
代理机构：Eschweiler & Associates, LLC
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容