METHOD FOR PRODUCING SEMICONDUCTOR WAFER

专利名称：METHOD FOR PRODUCING

SEMICONDUCTOR WAFER

发明人：Tomohiro Hashii,Yuichi Kakizono申请号：US12475876申请日：20090601

公开号：US20090311863A1公开日：20091217

专利附图：

摘要：A semiconductor wafer is produced by a method comprising a slicing step ofcutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a fixed grainbonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of

upper and lower plates each having a pad of fixed grain bonded abrasive to

simultaneously grind both surfaces of the semiconductor wafer; and a one-side polishingstep subjected to both surfaces of the semiconductor wafer after the fixed grain bondedabrasive grinding step.

申请人：Tomohiro Hashii,Yuichi Kakizono

地址：Tokyo JP,Tokyo JP

国籍：JP,JP

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