Nitride semiconductor laser device

专利名称：Nitride semiconductor laser device发明人：MASAHIKO SANO申请号：AU3229701申请日：20010215公开号：AU3229701A公开日：20010827

摘要：A nitride semiconductor laser device of high reliability such that the width ofcontact between a p-side ohmic electrode and a p-type contact layer is preciselycontrolled. The device comprises a substrate, an n-type nitride semiconductor layer, anactive layer, and a p-type nitride semiconductor layer. All the layers are formed in orderon the substrate. A ridge part including the uppermost layer of the p-type nitridesemiconductor layer of the p-type nitride semiconductor layer i.e., a p-type contact layeris formed in the p-type nitride semiconductor layer. Ap-side ohmic electrode is formedon the p-type contact layer of the top of the ridge part. A first insulating film having anopening over the top of the ridge part covers the side of the ridge part and the portionnear the side of the ridge part. The p-side ohmic electrode is in contact with the p-typecontact layer through the opening. A second insulating film is formed on the firstinsulating film.

申请人：NICHIA CORPORATION

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