专利名称：SUBSTRATE PROCESSING METHOD AND
METHOD OF MANUFACTURINGSEMICONDUCTOR DEVICE
发明人：Hiroshi Akasaka,Masayoshi Ikeda,Kazuhiro
Kimura,Yasushi Kamiya,Tomohiko Toyosato
申请号：US15164625申请日：20160525
公开号：US20160268162A1公开日：20160915
专利附图：
摘要：An object of the present invention is to provide a method which enable a
material to be fully embedded into a recess portion with a deposition film left in therecess portion. A method in one embodiment comprises: a first irradiation step ofirradiating a deposition film formed on an opening portion of a recess portion in asubstrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and asecond irradiation step of, after the first irradiation step, irradiating the deposition filmwith the particle beam in a direction at a second angle which is closer to perpendicular tothe substrate in-plane direction than the first angle is, to remove part of the remainingdeposition film in the thickness direction.
申请人：CANON ANELVA CORPORATION
地址：Kawasaki-shi JP
国籍：JP
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