SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURI

专利名称：SUBSTRATE PROCESSING SYSTEM, METHOD

OF MANUFACTURING SEMICONDUCTORDEVICE AND NON-TRANSITORYCOMPUTER-READABLE RECORDINGMEDIUM

发明人：Taketoshi SATO申请号：US14228465申请日：20140328

公开号：US20150187611A1公开日：20150702

专利附图：

摘要：A substrate processing system includes a plurality of processing chambersaccommodating substrates, a processing gas supply system configured to supply aprocessing gas sequentially into the plurality of processing chambers, a reactive gassupply system configured to supply an activated reactive gas sequentially into theplurality of processing chambers, a buffer tank installed at the processing gas supplysystem, and a control unit configured to control the processing gas supply system andthe reactive gas supply system such that a time period of supplying the reactive gas intoone of the plurality of processing chambers is equal to a sum of a time period ofsupplying the processing gas into the one of the plurality of processing chambers and atime period of supplying the processing gas into the buffer tank, and the processing gasand the reactive gas are alternately supplied into the plurality of processing chambers.

申请人：Taketoshi SATO

地址：Toyama-shi JP

国籍：JP

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