Method of forming contacts for a semiconductor dev

专利名称：Method of forming contacts for a

semiconductor device

发明人：Yuan-Tien Tu,Tsai-Chun Li,Huan-Just Lin,Shih-Chang Chen

申请号：US12906868申请日：20101018公开号：US08222136B2公开日：20120717

专利附图：

摘要：The present disclosure provides a method of fabricating a semiconductordevice. The method includes forming a layer over a substrate. The method includes

forming a first opening in the layer that exposes a first region of the substrate. Themethod includes removing a first oxidation layer formed over the first region through afirst sputtering process. The method includes filling the first opening with a conductivematerial. The method includes forming a second opening in the layer that exposes asecond region of the substrate, the second region being different from the first region.The method includes removing a second oxidation layer formed over the second regionthrough a second sputtering process. One of the first and second sputtering processes ismore powerful than the other.

申请人：Yuan-Tien Tu,Tsai-Chun Li,Huan-Just Lin,Shih-Chang Chen

地址：Puzih TW,Hsinchu TW,Hsinchu TW,Hsinchu TW

国籍：TW,TW,TW,TW

代理机构：Haynes and Boone, LLP

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