HC2302

HC230220VN-ChannelMOSFETGeneralDescriptionTheHC2302combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.FeaturesVDSID(atVGS=4.5V)RDS(ON)(atVGS=4.5V)20V3.0A45mΩ(Max)SOT23DD S G G SAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterDrain-SourceVoltageGate-SourceVoltageDrainCurrent-ContinuousDrainCurrent–PulsedMaximumPowerDissipationJunctionandStorageTemperatureRangeThermalCharacteristicsParameterThermalResistancejunction-caseThermalResistanceunction-to-AmbientSymbolRθJcRθJASymbolVDSVGSMaximum20±123.01.8-120.8-55To150UnitsVVAAAW℃TC=25°CTC=100°CIDIDIDMPDTJ,TSTGTypMax1.162Unit℃/W℃/WHutchipSemiconductorCo.,Ltd1of5V1.0HC2302

ElectricalCharacteristics(TJ=25℃unlessotherwisenoted)SymbolParameterConditionMinTypMaxUnitSTATICPARAMETERSBVDSSIDSSIGSSVGS(th)RDS(ON)gfsDrain-SourceBreakdownVoltageZeroGateVoltageDrainCurrentGate-BodyLeakageCurrentGateThresholdVoltageDrain-SourceOn-StateesistanceForwardTransconductanceVGS=0VID=250μAVDS=20V,VGS=0VVGS=±12V,VDS=0VVDS=VGS,ID=250μAVGS=4.5V,ID=3.0AVGS=2.5V,ID=2.0AVDS=5V,ID=3A0.51.035458201±1001.54555VμAnAVmΩmΩSDYNAMICPARAMETERSCissCossCrssInputCapacitanceOutputCapacitanceReverseTransferCapacitanceVDS=10V,VGS=0V,F=1.0MHz30012080pFpFpFSWITCHINGPARAMETERStd(on)trtd(off)tfQgQgsQgdVSD

Note：1.2.3.

RepetitiveRating:Pulsedwidthlimitedbymaximumjunctiontemperature.Thedatatestedbypulsed,pulsewidth≦300us,dutycycle≦2%.Essentiallyindependentofoperatingtemperature.

Turn-onDelayTimeTurn-onRiseTimeTurn-OffDelayTimeTurn-OffFallTimeTotalGateChargeGate-SourceChargeGate-DrainChargeDiodeForwardVoltageVGS=4.5VVDS=10VRG=6ΩID=3A158545204.0nSnSnSnSnCnCnC1.3VVDS=10V,ID=3A,VGS=4.5VVGS=0V,ISD=1A0.651.60.70HutchipSemiconductorCo.,Ltd2of5V1.0HC2302

TYPICALELECTRICALANDTHERMALCHARACTERISTICS )A( tnerruC niarD suounitnoC , DITC , Case Temperature (℃)

Fig.1 Continuous Dr ain Current vs. TC )V( egatlVo dlohserh TetaG dezilamroNTJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ

)AJθR( esnopse Rlamreh TdezilamroNSquare Wave Pulse Duration (s)

Fig.5 Normalized Transient ImpedanceHutchipSemiconductorCo.,Ltd )Ωm( ecnatsise RnO dezilamroNTJ , Junction Temperature (℃)

Fig.2 Normalized RDSON vs. TJ

450400350Ciss

300

)Fp250( e200cnCoss

at150icap100aC50Crss00

5

10

15

20

VDS(Volts)

Fig.4 Capacitance Characteristics

)A( tnerruC niarD suounitnoC , DIVDS , Drain to Source Voltage (V)

Fig.6 Maximum Safe Operation Area

3of5V1.0

HC2302

TYPICALELECTRICALANDTHERMALCHARACTERISTICSVDS90%10%VGSTd(on)TrTd(off)TfTonToffFig.7 Switching Time Waveform HutchipSemiconductorCo.,Ltd4of5Fig.8 Gate Charge Waveform

V1.0HC2302

SOT23 PACKAGE INFORMATION

Symbol A A1 A2 b c D E E1 e e1 L L1 L2 θ Dimensions In Millimeters Max 1.150 0.100 1.050 0.500 0.150 3.000 1.400 2.550 0.95 TYP. 2.000 0.55 REF. 0.500 0.25 TYP. 8° 0° 0.300 1.800 Min0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 Dimensions In InchesMax 0.045 0.004 0.041 0.020 0.006 0.118 0.055 0.100 0.037 TYP. 0.079 0.022 REF. 0.020 0.01 TYP. 8° 0° 0.012 0.071 Min0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 HutchipSemiconductorCo.,Ltd5of5V1.0