Non-volatile memory devices having resistance chan

专利名称：Non-volatile memory devices having

resistance changeable elements and relatedsystems and methods

发明人：Heung-Kyu Park,In-Sun Park,In-Gyu

Baek,Byeong-Chan Lee,Sang-BomKang,Woo-Bin Song

申请号：US13220777申请日：20110830公开号：US08664633B2公开日：20140304

专利附图：

摘要：A non-volatile memory device may include a first wordline on a substrate, aninsulating layer on the first wordline, and a second wordline on the insulating layer sothat the insulating layer is between the first and second wordlines. A bit pillar may extendadjacent the first wordline, the insulating layer, and the second wordline in a directionperpendicular with respect to a surface of the substrate, and the bit pillar may beelectrically conductive. In addition, a first memory cell may include a first resistancechangeable element electrically coupled between the first wordline and the bit pillar,and a second memory cell may include a second resistance changeable elementelectrically coupled between the second wordline and the bit pillar. Related methodsand systems are also discussed.

申请人：Heung-Kyu Park,In-Sun Park,In-Gyu Baek,Byeong-Chan Lee,Sang-BomKang,Woo-Bin Song

地址：Gumi-si KR,Seoul KR,Seoul KR,Yongin-si KR,Seoul KR,Hwaseong-si KR

国籍：KR,KR,KR,KR,KR,KR

代理机构：Myers Bigel Sibley & Sajovec, P.A.

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