SGM721 SGM722 SGM723 SGM724
970µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifier
PRODUCT DESCRIPTION The SGM721 (single), SGM722 (dual), SGM723 (single with shutdown) and SGM724 (quad) are low noise, low voltage, and low power operational amplifiers, that can be designed into a wide range of applications. The SGM721/2/3/4 have a high Gain- Bandwidth Product of 10MHz, a slew rate of 8.5V/μs, and a quiescent current of 0.97mA/amplifier at 5V. The SGM723 has a power-down disable feature that reduces the supply current to 160nA. The SGM721/2/3/4 are designed to provide optimal performance in low voltage and low noise systems. They provide rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground, and the maximum input offset voltage is 4mV for SGM721/2/3/4. They are specified over the extended industrial temperature range (−40°C to +125°C). The operating range is from 2.5V to 5.5V. The single version, SGM721 is available in SC70-5, SOT23-5 and SO-8 packages. SGM723 is available in SOT23-6 and SO-8 packages. The dual version SGM722 is available in SO-8 and MSOP-8 packages. The quad version SGM724 is FEATURES • Low Cost • Rail-to-Rail Input and Output 1mV Typical VOS • High Gain-Bandwidth Product: 10MHz • High Slew Rate: 8.5V/µs • Settling Time to 0.1% with 2V Step: 0.36 µs • Overload Recovery Time: 0.4µs • Low Noise : 8 nV/Hz • Operates on 2.5 V to 5.5V Supplies • Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V • Low Power 0.97 mA/Amplifier Typical Supply Current SGM723 160nA when Disabled • Small Packaging SGM721 Available in SC70-5, SOT23-5 and SO-8 SGM722 Available in MSOP-8 and SO-8 SGM723 Available in SOT23-6 and SO-8 SGM724 Available in TSSOP-16 and SO-16 PIN CONFIGURATIONS (Top View) SGM721OUT-VS124SC70-5 / SOT23-5 -IN5+VSNC-IN+IN-VS1234available in SO-16 and TSSOP-16 packages. SGM721/7238765NC = NO CONNECT DISABLE(SGM723 ONLY)+VSOUTNC+IN3APPLICATIONS Sensors Audio Active Filters A/D Converters Communications Test Equipment Cellular and Cordless Phones Laptops and PDAs Photodiode Amplification Battery-Powered Instrumentation OUT-VS+IN123SGM723723SOT23-6654+VSDISABLE-INSO-8 SGM724OUTA-IN A+IN A+VS12345678NC = NO CONNECT16OUTD15-IND14+IND13-VS12+INC11109-INCOUTCNCSGM722OUTA1-IN A+IN A238765SO-8 / MSOP-8+VSOUT B-IN B+IN B+INB-INBOUTBNC-VS4TSSOP-16 / SO-16
Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com
REV. B
元器件交易网www.cecb2b.com
ELECTRICAL CHARACTERISTICS :VS = +5V
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
SGM721/2/3/4 PARAMETER CONDITION TYP +25℃ +25℃INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Voltage Range (VCM) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (∆VOS/∆T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) Closed-Loop Output Impedance POWER-DOWN DISABLE Turn-On Time Turn-Off Time DISABLE Voltage-Off DISABLE Voltage-On MIN/MAX OVER TEMPERATURE 0℃ to -40℃ 70℃ to 85℃ 4.5 74 64 81 90 4.75 73 63 80 88 -40℃ to 125℃ UNITS 5 72.5 62 72 77 mV pA pA V dB dB dB dB µV/℃V V MIN/MAXMAXTYPTYPTYP MIN MIN MIN MIN TYPTYPTYPMIN TYPTYPTYPMAXMINMIN MAX MIN MAX MAX VS= 5.5V 1 1 1 -0.1 to +5.691 86 90 100 2.1 0.1 0.015 57 5.7 2.2 0.8 4 75 64 84 95 VS= 5.5V, VCM = - 0.1V to 4 V VS = 5.5V, VCM = - 0.1V to 5.6 V RL = 600Ω ,Vo = 0.15V to 4.85VRL =10KΩ ,Vo = 0.05V to 4.95V RL = 600Ω RL = 10KΩ F = 1MHz, G = +1 53 0.8 2 2.5 5.5 80 1.13 1 52 2.5 5.5 79 1.25 50 2.5 5.5 78 1.28 45 2.5 5.5 77 1.38 mA Ω µs µs V V V V dB mA µA POWER SUPPLY Operating Voltage Range Power Supply Rejection Ratio (PSRR) Quiescent Current/ Amplifier (IQ) Supply Current when Disabled (SGM723 only) DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Phase Margin(φO) Full Power Bandwidth(BWP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time NOISE PERFORMANCE Voltage Noise Density (en) Current Noise Density( in)
Vs = +2.5 V to + 5.5 V VCM = (-VS) + 0.5V IOUT = 0 RL = 600Ω ＜1% distortion G = +1, 2 V Output Step G = +1, 2 V Output Step VIN ·Gain = Vs f = 1kHz f = 10kHz f = 1kHz 100 0.97 0.16 10 63.5 400 8.5 0.36 0.4 8 6.4 10 MHz KHz V/µs µs µs nV/nV/fA/Hz HzHzTYPTYPTYPTYPTYPTYPTYPTYPdegreesTYPSpecifications subject to change without notice.
SGM721/2/3/4
２
元器件交易网www.cecb2b.com
PACKAGE/ORDERING INFORMATION
PACKAGE PACKAGE
MODEL ORDER NUMBER DESCRIPTIONOPTION
SGM721
MARKING
INFORMATION
721 721 SGM721XC5/TR SC70-5 Tape and Reel, 3000SGM721XN5/TR SOT23-5 Tape and Reel, 3000
SGM721XS/TR SO-8 Tape and Reel, 2500SGM721XS
SGM722 SGM723 SGM724
SGM722XMS/TR MSOP-8 Tape and Reel, 3000SGM722XMS SGM722XS/TR SO-8 Tape and Reel, 2500SGM722XS SGM723XN6/TR SOT23-6 Tape and Reel, 3000
723 SGM723XS/TR SO-8 Tape and Reel, 2500SGM723XS SGM724XS/TR SO-16 Tape and Reel, 2500SGM724XS SGM724XTS TSSOP-16 Tape and Reel, 3000SGM724XTS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- ............................................ 7.5 V
Common-Mode Input Voltage
.................................... (–VS) – 0.5 V to (+VS) +0.5V
Storage Temperature Range..................... –65℃ to +150℃ Junction Temperature.................................................160℃
+150℃ Operating Temperature Range.................–55℃ to
Package Thermal Resistance @ TA = 25℃
SC70-5, θJA................................................................ 333℃/W SOT23-5, θJA.............................................................. 190℃/W SOT23-6, θJA.............................................................. 190℃/W SO-8, θJA......................................................................125℃/W MSOP-8, θJA.............................................................. 216℃/W SO-16, θJA..................................................................... 82℃/W TSSOP-16, θJA............................................................ 105℃/W Lead Temperature Range (Soldering 10 sec)
.....................................................260℃
ESD Susceptibility
HBM................................................................................1500V MM....................................................................................400V
CAUTION
This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
３
NOTES
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SGM721/2/3/4
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Closed-Loop Output Voltage Swing65)p-p4Vs = 5VV(VIN = 4.9VP-PegTaA = 25℃t3lRL = 2KΩoV G = +1tu2ptuO1010100100010000Frequency(kHz)
Positive Overload Recovery+2.5V0VVs = ±2.5VRL = 10KΩ0VVIN = 50mVG = 100-50mVTime(500ns/div)
Large-Signal Step Response Small-Signal VsG = 5V C = +1 RL = 200pF L = 10KΩ
)vid/V1(egatloV Time(500ns/div) Time(200ns/div)
Output Impedance vs.Frequency100Vs = 5V)Ω(80ecnade60pG = 100mI t40G = 10uptuG = 1O200110100100010000Frequency(kHz)
Negative Overload RecoveryVs = ±2.5V+2.5VRL = 10KΩVIN = 50mVG = 1000V0V-50mV
Time(500ns/div)
Step Response
VsG = 5V
C = +1 RL = 100pF L = 10KΩ
)vid/Vm05(egatloV
SGM721/2/3/4
４
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
PSRR vs.Frequency120Vs = 5V100)B80d(RRSP604020110100100010000Frequency(kHz)
Small-Signal Overshoot vs.Load Capacitance70Vs = 5V)60%(RL = 10kΩtoTo50A = 25℃hsG = 1rev40+OSO l-OSa30ngiS-20llamS1001101001000Load Capacitance(pF)
Channel Separation vs.Frequency130120)Bd(no110itara100peVs = 5VS le90RL = 620ΩnTA = 25℃nahG = 1C80700.1110100100010000100000Frequency(kHz) CMRR vs.Frequency120110Vs = 5V100)90Bd(R80RMC70605040110100100010000Frequency(kHz)
Input Voltage Noise Spectral Density100vs.Frequency)zVs = 5VH√RL = 620Ω/Vn(esioN 10egatloV110100100010000 Frequency(Hz)
Open-Loop Gain vs.Temperature120)110Bd(RL = 10KΩnia100G pooL–90RL = 600ΩnepO8070-50-30-101030507090110130 Temperature(℃)
SGM721/2/3/4
５
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
CMRR vs.Temperature120VS = 5.5V110VCM = - 0.1V to 4 V100)Bd(R90RMC80VCM = - 0.1V to 5.6V7060-50-30-101030507090110130Temperature(℃)
Supply Current vs.Temperature1.41.3)A1.2m(tn1.1erru1C VyS = 2.5Vl0.9ppu= 3VS0.8VS V0.7S = 5V0.6-50-30-101030507090110130Temperature(℃)
Output Voltage Swing vs.Output Current5Sourcing Current4VS = 5V)V(ega3tl-50℃o135℃25℃V tu2ptuO1Sinking Current00102030405060708090Output Current(mA)
PSRR vs.Temperature130120VS = 2.5V to 5.5V110)Bd(R100RSP908070-50-30-101030507090110130 Temperature(℃)
Shutdown Current vs.Temperature300260)VS = 5VAn(220tnerr180uC n140wodtu100VS = 3VhS60VS = 2.5V20-50-30-101030507090110130
Temperature(℃)
Output Voltage Swing vs.Output Current3Sourcing Current)VS = 3VV(eg2atlo135℃25℃-50℃V tupt1uOSinking Current00102030405060 Output Current(mA)
SGM721/2/3/4
６
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Small-Signal Overshoot vs.Load Capacitance70Vs = 2.7V)60%RL = 10kΩ(toTA = 25℃o50hsG = 1re+OSv40O -OSla30ngiS-20llamS1001101001000Load Capacitance(pF)
Large-Signal Step Response Small-Signal VsG = 2.7V
C = +1 RL = 200pFL = 10KΩ
)vid/V1(egatloV Time(500ns/div) Time(200ns/div)
Closed-Loop Output Voltage Swing32.5)p-pV(2egatl1.5oVs = 2.7VV tup1VIN = 2.6VP-PtTA = 25℃uO0.5RL = 2KΩG = 1010100100010000Frequency(kHz)
Output Impedance vs.Frequency120100Vs = 2.7V)Ω(ec80nadep60mI G = 100tu40ptG = 10uO20G = 10110100100010000Frequency(kHz) Step Response
VsG = 2.7VC = +1 RL = 100pF L = 10KΩ
)vid/Vm05(egatloV
Channel Separation vs.Frequency130120)Bd(no110itara100peVs = 2.7VS l90RL = 620ΩenTA = 25℃nahG = 1C80700.1110100100010000100000
Frequency(kHz)
SGM721/2/3/4
７
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Offset Voltage Production Distribution33)30%27Typical production(sdistribution ofre24packaged units.ifi21lpm18A f15o t12ne9cre6P30-4-3-2-101234Offset Voltage(mV)
８
SGM721/2/3/4
元器件交易网www.cecb2b.com
APPLICATION NOTES
Power-Supply Bypassing and Layout
Driving Capacitive Loads
The SGM72x can directly drive 4700pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD.
RISOSGM721VOUTCL
The SGM72x family operates from either a single +2.5V to +5.5V supply or dual ±1.25V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance.
Good PC board layout techniques optimize performance by decreasing the amount of stray capacitance at the op amp’s inputs and output. To decrease stray capacitance, minimize trace lengths and widths by placing external components as close to the device as possible. Use surface-mount components whenever possible.
For the operational amplifier, soldering the part to the board directly is strongly recommended. Try to keep the high frequency big current loop area small to minimize the EMI (electromagnetic interfacing).
VIN
VDDVDD10µF10µF0.1µFFigure 1. Indirectly Driving Heavy Capacitive Load
An improvement circuit is shown in Figure 2. It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output. CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop.
0.1µFVn
VnSGM721VOUTSGM721VOUT10µFVp
VpCFRFRISOSGM721VSS(GND)
0.1µFVOUT
CLRL
VSS
VIN
Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy
For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node.
Figure 3. Amplifier with Bypass Capacitors
Grounding
A ground plane layer is important for SGM72x circuit design. The length of the current path speed currents in an inductive ground return will create an unwanted voltage noise. Broad ground plane areas will reduce the parasitic inductance.
９
Input-to-Output Coupling
To minimize capacitive coupling, the input and output signal traces should not be parallel. This helps reduce unwanted positive feedback.
SGM721/2/3/4
元器件交易网www.cecb2b.com
Typical Application Circuits
CR2R1VIN
Differential Amplifier
The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then V= ( Vp – Vn ) × R/ R+ Vref.
OUT 2 1 R2R1VnSGM721VOUT
Vp
R3
R4
Vref
Figure 4. Differential Amplifier
Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance.
R2 R1 SGM721Vn
SGM721V OUT
Vp
SGM721R3R4 Vref
Figure 5. Instrumentation Amplifier
Low Pass Active Filter
The low pass filter shown in Figure 6 has a DC gain of (-R2/R1) and the –3dB corner frequency is 1/2πR 2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration.
１０
SGM721VOUT
R3=R1//R2
Figure 6. Low Pass Active Filter
SGM721/2/3/4
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
SC70-5
De1eLθSymbolDimensions In Millimeters MinDimensions In Inches Max Min Max 1.100 0.035 0.043 0.100 0.000 0.004 1.000 0.035 0.039 0.350 0.006 0.014 0.150 0.003 0.006 2.200 0.079 0.087 1.350 0.045 0.053 2.450 0.085 0.096 1.400 0.047 0.055 0.460 0.010 0.018 A 0.900A1 0.000A2 0.900E1Eb 0.150c 0.080D 2.000L1bA1C0.20E 1.150E1 2.150e1 1.200 A2Ae 0.650TYP 0.026TYP L 0.525REF 0.021REF
L1 0.260θ 0° 8° 0° 8° SGM721/2/3/4
１１
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
SOT23-5
DbL0θ0.20SymbolDimensions Dimensions In Millimeters In Inches Min Max Min MaxA 1.050 1.250 0.041 0.049A1 0.000 0.100 0.000 0.004E1A2 1.050 1.150 0.041 0.045b 0.300 0.400 0.012 0.016c 0.100 0.200 0.004 0.008ELee1A1CD 2.820 3.020 0.111 0.119E 1.500 1.700 0.059 0.067E1 2.650 2.950 0.104 0.116e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079A2L 0.700REF 0.028REF A
L1 0.300 0.600 0.012 0.024θ 0° 8° 0° 8° SGM721/2/3/4
１２
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
SOT23-6
De1eL0θ0.20SymbolDimensions Dimensions In Millimeters In Inches Min Max Min MaxA 1.050 1.250 0.041 0.049A1 0.000 0.100 0.000 0.004A2 1.050 1.150 0.041 0.045b 0.300 0.400 0.012 0.016c 0.100 0.200 0.004 0.008D 2.820 3.020 0.111 0.119E 1.500 1.700 0.059 0.067E1 2.650 2.950 0.104 0.116E1EbA1LCe 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079L 0.700REF 0.028REF A2AL1 0.300 0.600 0.012 0.024
θ 0° 8° 0° 8° SGM721/2/3/4
１３
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
SO-8
DC SymbolLDimensions Dimensions In Millimeters In Inches Min Max Min Max1.350 0.100 1.350 0.330 0.190 4.780 3.800 5.800 0.400 1.750 0.250 1.550 0.510 0.250 5.000 4.000 6.300 1.270 0.053 0.004 0.053 0.013 0.007 0.188 0.150 0.228 0.016 0.0690.0100.0610.0200.0100.1970.1570.2480.050 A A1 E1E A2 B C D eθ E E1 e A11.270TYP 0.050TYP BA2 L θ 0° 8° 0° 8° A
SGM721/2/3/4
１４
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
MSOP-8 bC SymbolDimensions Dimensions In Millimeters In Inches Min Max Min MaxLeA2AA1A 0.8001.200 0.031 0.047A1 0.0000.200 0.000 0.008A2 0.7600.970 0.030 0.038b 0.30 TYP 0.012 TYP c 0.15 TYP 0.006 TYP D 2.9003.100 0.114 0.122e 0.65 TYP 0.026 TYP E 2.9003.100 0.114 0.122E1 4.7005.100 0.185 0.201L 0.4100.650 0.016 0.026θ 0° 6° 0° 6° E1ED
SGM721/2/3/4
１５
θ 元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
SO-16
DCSymbolE1EDimensions Dimensions In Millimeters In Inches Min Max Min MaxLθeA 1.350 1.750 0.053 0.069A1 0.100 0.250 0.004 0.010A2 1.350 1.550 0.053 0.061b 0.330 0.510 0.013 0.020c 0.170 0.250 0.007 0.010D 9.800 10.20 0.386 0.402E 3.800 4.000 0.150 0.157E1 5.800 6.200 0.228 0.244e 1.270 (BSC) 0.050 (BSC) L 0.400 1.270 0.016 0.050θ 0° 8° 0° 8° A2A1Ab
SGM721/2/3/4
１６
元器件交易网www.cecb2b.com
PACKAGE OUTLINE DIMENSIONS
TSSOP-16
AbSymbolE1EDimensions DimensionsIn Millimeters In Inches Min Max Min MaxPIN #1 IDENT.eA2ACθDLA HD 4.9005.100 0.193 0.201E 4.3004.500 0.169 0.177b 0.1900.300 0.007 0.012c 0.0900.200 0.004 0.008E1 6.2506.550 0.246 0.258A 1.100 0.043A2 0.8001.000 0.031 0.039A1 0.0200.150 0.001 0.006e 0.65 (BSC) 0.026 (BSC) L 0.500 0.700 0.020 0.028H 0.25(TYP) 0.01(TYP) θ 1° 7° 1° 7° A1 SGM721/2/3/4
１７
元器件交易网www.cecb2b.com
REVISION HISTORY
Location Page 11/06— Data Sheet changed from REV. A to REV. B
Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Shengbang Microelectronics Co, Ltd
Unit 3, ChuangYe Plaza
No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com
１８
SGM721/2/3/4
因篇幅问题不能全部显示，请点此查看更多更全内容