®STX13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
ssss
s
ST13003 SILICON IN TO-92 PACKAGEMEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERSMINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS: sELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGDESCRIPTION The device is manufactured using high voltageMulti Epitaxial Planar technology for highswitching speeds and medium voltage capability.It uses a Cellular Emitter structure with planaredge termination to enhance switching speedswhile maintaining the wide RBSOA.
The STX13003 is designed for use in compactfluorescent lamp application.
TO-92INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
SymbolVCESVCEOVEBOICICMIBIBMPtotTstgTj ParameterCollector-Emitter Voltage (VBE = 0)Collector-Emitter Voltage (IB = 0)Emitter-Base Voltageo(IC = 0, IB = 0.5 A, tp < 10µs, Tj < 150C)Collector CurrentCollector Peak Current (tp < 5 ms)Base CurrentBase Peak Current (tp < 5 ms)Total Dissipation at TC = 25 oCStorage TemperatureMax. Operating Junction TemperatureValue700400V(BR)EBO130.51.51.5-65 to 150150UnitVVVAAAAWoCoCApril 2003 1/7
元器件交易网www.cecb2b.com
STX13003
THERMAL DATA
Rthj-caseThermal Resistance Junction-case Max83.3oC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
SymbolICEVV(BR)EBOParameterCollector Cut-offCurrent (VBE = -1.5V)Emitter-BaseBreakdown Voltage(IC = 0)Test ConditionsVCE = 700VVCE = 700V Tj = 125oCIE = 10 mA9Min.Typ.Max.1518UnitmAmAVVCEO(sus)∗Collector-EmitterSustaining Voltage(IB = 0)VCE(sat)∗Collector-EmitterSaturation VoltageBase-EmitterSaturation VoltageDC Current GainRESISTIVE LOADRise TimeStorage TimeFall TimeINDUCTIVE LOADStorage TimeIC = 10 mAL = 25 mHIC = 0.5 A IB = 0.1 AIC = 1 A IB = 0.25 AIC = 1.5 A IB = 0.5 AIC = 0.5 A IB = 0.1 AIC = 1 A IB = 0.25 AIC = 0.5 A VCE = 2 VIC = 1 A VCE = 2 VIC = 1 A VCC = 125 V IB1 = 0.2 A IB2 = -0.2 ATp= 25 µsIC = 1 A IB1 = 0.2 AVBE = -5 V L = 50 mHVclamp = 300 V400V0.51311.2853525140.70.8VVVVVVBE(sat)∗hFE∗trtstftsµsµsµsµs∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.Safe Operating AreaOutput Characteristics
2/7元器件交易网www.cecb2b.com
STX13003
Reverse Biased SOA
Derating Curve
DC Current Gain DC Current Gain
Collector Emitter Saturation VoltageBase Emitter Saturation Voltage
3/7元器件交易网www.cecb2b.com
STX13003
Inductive Load Fall Time
Inductive Load Storage Time
4/7元器件交易网www.cecb2b.com
STX13003
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch2) Non-inductive Resistor3) Fast recovery rectifierFigure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch2) Non-inductive Resistor5/7元器件交易网www.cecb2b.com
STX13003
TO-92 MECHANICAL DATAmmMIN.AbDEee1LRS1WV4.320.364.453.302.411.1412.702.161.140.414 degreeTYP.MAX.4.950.514.953.942.671.4015.492.411.520.566 degreeMIN.0.1700.0140.1750.1300.0950.0450.5000.0850.0450.0164 degreeinchTYP.MAX.0.1950.0200.1940.1550.1050.0550.6090.0940.0590.0226 degreeDIM.6/7元器件交易网www.cecb2b.com
STX13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.http://www.st.com7/7
因篇幅问题不能全部显示，请点此查看更多更全内容