Circuit and method of generating internal supply v

专利名称：Circuit and method of generating internal

supply voltage in semiconductor memorydevice

发明人：Jong-Hyoung Lim,Sang-Seok Kang,Sang-Man

Byun

申请号：US11521178申请日：20060914

公开号：US20070070695A1公开日：20070329

专利附图：

摘要：An internal supply voltage generation circuit includes first and second driving

circuits and a resistive device. The first driving circuit receives a feedback voltage from afirst node and generates a first output voltage based on first and second referencevoltages to provide the first output voltage to the first node. The first output voltage ismaintained between the first and second reference voltages. The second driving circuitreceives a feedback voltage from a second node voltage and generates a second outputvoltage based on third and fourth reference voltages to provide the second outputvoltage to the second node. The second output voltage is maintained between the thirdand fourth reference voltages, and the second output voltage of the second node isprovided as an internal supply voltage. The resistive device is coupled between the firstand second nodes.

申请人：Jong-Hyoung Lim,Sang-Seok Kang,Sang-Man Byun

地址：Hwaseong-si KR,Suwon-si KR,Suwon-si KR

国籍：KR,KR,KR

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