Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) (Ω)Qg (Max.) (nC)Qgs (nC)Qgd (nC)Configuration
VGS = 10 V
246.311Single
DFEATURES
500
1.40
•Low Gate Charge Qg Results in Simple DriveRequirement
•Improved Gate, Avalanche and Dynamic dV/dtRuggedness
AvailableRoHS*COMPLIANT•Fully Characterized Capacitance and Avalanche Voltageand Current
•Effective Coss specified•Lead (Pb)-free Available
I2PAK (TO-262)D2PAK (TO-263)APPLICATIONS
•Switch Mode Power Supply (SMPS)
G•Uninterruptible Power Supply•High speed power switching
SDGGDSSN-Channel MOSFET TYPICAL SMPS TOPOLOGIES
•Two Transistor Forward•Half Bridge and Full Bridge
ORDERING INFORMATION
PackageLead (Pb)-freeSnPb
Note
a.See device orientation.
D2PAK (TO-263)IRF830ASPbFSiHF830AS-E3IRF830ASSiHF830AS
D2PAK (TO-263)IRF830ASTRLPbFaSiHF830ASTL-E3aIRF830ASTRLaSiHF830ASTLa
I2PAK (TO-262)IRF830ALPbFSiHF830AL-E3 IRF830ALSiHF830AL
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOLNLIMITUIT
500Drain-Source Voltage VDS
V
30Gate-Source VoltageVGS ± TC = 25 °C 5.0Continuous Drain CurrentVGS at 10 VID
3.2TC = 100 °C A
a, eIDM 20Pulsed Drain Current
Linear Derating Factor0.59W/°C
EAS 230mJ Single Pulse Avalanche Energyb, eaIAR 5.0AAvalanche Current
aEAR 7.4mJ Repetiitive Avalanche Energy
TA = 25 °C 3.1
Maximum Power DissipationPDW
74TC = 25 °C
dV/dt 5.3V/ns Peak Diode Recovery dV/dtc, e- 55 to + 150Operating Junction and Storage Temperature RangeTJ, Tstg
°C
Soldering Recommendations (Peak Temperature)for 10 s300dNotes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).c.ISD ≤ 5.0 A, dI/dt ≤ 370 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.d.1.6 mm from case.
e.Uses SiHF830A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may applyDocument Number: 91062S-81352-Rev. A, 16-Jun-08
www.vishay.com
1
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLMaximum Junction-to-Ambient (PCB Mounted, steady-state)a
Maximum Junction-to-Case (Drain)
RthJARthJC
TYP.--NMAX.UIT401.7
°C/W
Note
a.When mounted on 1\" square PCB (FR-4 or G-10 material).
SPECIFICATIONSTJ = 25 °C, unless otherwise notedPARAMETER SYMBOLNNTEST CONDITIOS NMI.TYP.MAX.UITStaticDrain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance DynamicInput Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ChargeTurn-On Delay Time Rise TimeTurn-Off Delay Time Fall Time Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current Pulsed Diode Forward CurrentaBody Diode VoltageBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeForward Turn-On TimeISISMVSDtrrQrrtonMOSFET symbolshowing the integral reversep - n junction diodeVDS ΔVDS/TJ VGS(th)IGSS IDSS RDS(on) gfs Ciss VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mAdVDS = VGS, ID = 250 µA VGS = ± 30 VVDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 VID = 3.0 AbVDS = 50 V, ID = 3.0 Ad500-2.0----2.8--------------0.60------620934.38862739---10212115--4.5± 100252501.4-------246.311----V V/°C V nA µA ΩS VGS = 0 V, Coss VDS = 25 V, f = 1.0 MHz, see fig. 5d Crss Coss Coss eff.Qg ID = 5.0 A, VDS = 400 V, Qgs VGS = 10 V see fig. 6 and 13b, dQgd td(on) VDD = 250 V, ID = 5.0 A, RG = 14 Ω, RD = 49 Ω, see fig. 10b, dtd(off) tf tr VDS = 1.0 V, f = 1.0 MHzVGS = 0 VVDS = 400 V, f = 1.0 MHzVDS = 0 V to 400 Vc, dpFnC ns--------4302.05.0A201.56503.0VnsµCTJ = 25 °C, IS = 5.0 A, VGS = 0 VbTJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb, dIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.d.Uses SiHF830A data and test conditions.
www.vishay.com2
Document Number: 91062S-81352-Rev. A, 16-Jun-08
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
TYPICAL CHARACTERISTICS25 °C, unless otherwise noted
102ID, Drain-to-Source Current (A)10ID, Drain-to-Source Current (A)1VGSTop15 V10 V8.0 V7.0 V6.0 V5.5 V5.0 VBottom4.5 V4.5 V10210TJ = 150 °CTJ = 25 °C10.120 µs Pulse WidthTJ = 25 °C0.111010210-291062_010.14.091062_0320 µs Pulse WidthVDS = 50 V5.06.07.08.0VDS, Drain-to-Source Voltage (V)Fig. 1 - Typical Output Characteristics
VGS, Gate-to-Source Voltage (V)Fig. 3 - Typical Transfer Characteristics
ID, Drain-to-Source Current (A)VGSTop15 V10 V8.0 V7.0 V106.0 V5.5 V5.0 VBottom4.5 V14.5 VRDS(on), Drain-to-Source On Resistance(Normalized)1022.5ID = 5.0 AVGS = 10 V2.01.51.00.50.1191062_0220 µs Pulse WidthTJ = 150 °C101020.0- 60- 40- 20020406080100120140160VDS, Drain-to-Source Voltage (V)Fig. 2 - Typical Output Characteristics
91062_04TJ, Junction Temperature (°C)Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91062S-81352-Rev. A, 16-Jun-08
www.vishay.com
3
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
104C, Capacitance (pF)103ISD, Reverse Drain Current (A)VGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + CgdCiss10210TJ = 150 °C102Coss10Crss11101021031TJ = 25 °C0.10.291062_07VGS = 0 V0.40.60.81.01.291062_05VDS, Drain-to-Source Voltage (V)VSD, Source-to-Drain Voltage (V)Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward Voltage
20VGS, Gate-to-Source Voltage (V)ID = 5.0 AVDS = 400 V10216Operation in this area limitedby RDS(on)10 µs100 µs1 ms10 msID, Drain Current (A)VDS = 250 VVDS = 100 V101281TC = 25 °CTJ = 150 °CSingle Pulse101024For test circuitsee figure 130091062_060.1481216202491062_08103104QG, Total Gate Charge (nC)VDS, Drain-to-Source Voltage (V)Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com4
Document Number: 91062S-81352-Rev. A, 16-Jun-08
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
RDVDSVGS5.0RGD.U.T.+-VDDID, Drain Current (A)4.010 VPulse width ≤ 1 µsDuty factor ≤ 0.1 % 3.0Fig. 10a - Switching Time Test Circuit
2.0VDS1.090 %0.02591062_095075100125150TC, Case Temperature (°C)10 %VGStd(on)trtd(off)tfFig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10Thermal Response (ZthJC)1D = 0.500.200.10PDMt1t2Single Pulse(Thermal Response)10-410-310-2Notes:1. Duty Factor, D = t1/t22. Peak Tj = PDM x ZthJC + TC0.110.10.050.020.0110-210-591062_11t1, Rectangular Pulse Duration (s)Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 VVDStpVDSLDriverRG20 VD.U.T.IAStp0.01 Ω+A-VDDIASFig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test CircuitDocument Number: 91062
S-81352-Rev. A, 16-Jun-08www.vishay.com
5
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
EAS, Single Pulse Avalanche Energy (mJ)500400VDSav, Avalanche Voltage (V)IDTop2.2 A3.2 ABottom5.0 A79078530078020010077502550751001251507700.091062_12d1.02.03.04.05.091062_12cStarting TJ, Junction Temperature (°C)IAV, Avalanche Current (A)Fig. 12d - Basic Gate Charge Waveform
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulatorSame type as D.U.T.QG12 V0.2 µF0.3 µF50 kΩVGSQGSQGDD.U.T.+-VDSVGVGS3 mAChargeIGIDCurrent sampling resistorsFig. 13a - Maximum Avalanche Energy vs. Drain CurrentFig. 13b - Gate Charge Test Circuit
www.vishay.com6
Document Number: 91062S-81352-Rev. A, 16-Jun-08
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Peak Diode Recovery dV/dt Test CircuitD.U.T.+Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer-+-+-RG• dV/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by duty factor \"D\"• D.U.T. - device under test+-VDDDriver gate driveP.W.PeriodD = P.W.PeriodVGS = 10 V* D.U.T. ISDwaveformReverserecoverycurrentBody diode forwardcurrentdI/dtD.U.T. VDSwaveformDiode recoverydV/dtVDDRe-appliedvoltageInductor currentBody diode forward dropRipple≤5 %ISD* VGS = 5 V for logic level devicesFig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?91062.
Document Number: 91062S-81352-Rev. A, 16-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
www.vishay.com
1
因篇幅问题不能全部显示，请点此查看更多更全内容