irf3707

SMPS MOSFET

Applications

lHigh Frequency DC-DC Isolated

Converters with Synchronous Rectification for Telecom and Industrial useHigh Frequency Buck Converters for Computer Processor Power

l

IRF3707IRF3707SIRF3707L

HEXFET® Power MOSFET

VDSS

30V

RDS(on) max

12.5mΩ

ID

62A

Benefits

lll

Ultra-Low Gate ImpedanceVery Low RDS(on)

TO-220ABIRF3707

D2PakIRF3707S

TO-262IRF3707L

Fully Characterized Avalanche Voltage and Current

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

VDSDrain-Source Voltage 30VVGS Gate-to-Source Voltage ± 20 VID @ TC = 25°CContinuous Drain Current, VGS @ 10V 62ID @ TC = 70°CContinuous Drain Current, VGS @ 10V 52AIDMPulsed Drain Current󰀂248PD @TC = 25°CMaximum Power Dissipation󰀅 87WPD @TC = 70°CMaximum Power Dissipation󰀅 61W Linear Derating Factor 0.59 mW/°CTJ , TSTGJunction and Storage Temperature Range-55 to + 175°C

Thermal Resistance

Parameter

RθJCRθCSRθJARθJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 󰀄Junction-to-Ambient󰀄

Junction-to-Ambient (PCB mount)*

Typ.

–––0.50––––––

Max.

1.73–––6240

Units

°C/W

* When mounted on 1\" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes 󰀂 through 󰀄 are on page 10

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8/22/00

IRF3707/3707S/3707L

Static @ TJ = 25°C (unless otherwise specified)

ParameterMin.Typ.Max.Units ConditionsV(BR)DSSDrain-to-Source Breakdown Voltage30––––––VVGS = 0V, ID = 250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA–––9.0 12.5VGS = 10V, ID = 15A 󰀅RDS(on)Static Drain-to-Source On-ResistancemΩ–––12.617VGS = 4.5V, ID = 12A 󰀅VGS(th)Gate Threshold Voltage1.0–––3.0VVDS = VGS, ID = 250µA––––––20VDS = 24V, VGS = 0VµAIDSSDrain-to-Source Leakage Current––––––100VDS = 24V, VGS = 0V, TJ = 125°CGate-to-Source Forward Leakage––––––200VGS = 16VIGSSnAGate-to-Source Reverse Leakage––––––-200VGS = -16VDynamic @ TJ = 25°C (unless otherwise specified)SymbolgfsQgQgsQgdQosstd(on)trtd(off)tfCissCossCrssParameterForward TransconductanceTotal Gate ChargeGate-to-Source ChargeGate-to-Drain (\"Miller\") ChargeOutput Gate ChargeTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceMin.37–––––––––––––––––––––––––––––––––Typ.–––198.26.3188.57811.83.3199070750Max.Units Conditions–––SVDS = 15V, ID = 49.6A––– ID = 24.8A–––nCVDS = 15V–––VGS = 4.5V 󰀅27VGS = 0V, VDS = 15V–––VDD = 15V–––ID = 24.8Ans–––RG = 1.8Ω–––VGS = 4.5V 󰀅–––VGS = 0V–––VDS = 15V–––pFƒ = 1.0MHzAvalanche CharacteristicsSymbolEASIARParameterSingle Pulse Avalanche Energy󰀆Avalanche Current󰀂Typ.––––––Max.21362UnitsmJADiode CharacteristicsSymbolISISMParameterContinuous Source Current(Body Diode)Pulsed Source Current(Body Diode) 󰀂Diode Forward VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery TimeReverse Recovery ChargeMin.Typ.Max.Units––––––––––––––––––––––––––––––0.880.83949426262A2481.3–––59746393VnsnCnsnCVSDtrrQrrtrrQrr ConditionsDMOSFET symbolshowing theGintegral reverseSp-n junction diode.TJ = 25°C, IS = 31A, VGS = 0V 󰀅TJ = 125°C, IS = 31A, VGS = 0V 󰀅TJ = 25°C, IF = 31A, VR=20Vdi/dt = 100A/µs 󰀅TJ = 125°C, IF = 31A, VR=20Vdi/dt = 100A/µs 󰀅2www.irf.com

IRF3707/3707S/3707L

1000

VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5VBOTTOM 3.5V1000

VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5VBOTTOM 3.5V100

ID, Drain-to-Source Current (A)ID, Drain-to-Source Current (A)100

3.5V10

3.5V10

20µs PULSE WIDTHTj = 25°C10.1

1

10

100

20µs PULSE WIDTHTj = 175°C10.1

1

10

100

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics

10002.5°T = 25 C󰀁JR S ( o n D) , Drain-to-Source On Resistance(Normalized)ID=62A󰀁I D , Drain-to-Source Current (A)2.0 100󰀁°T = 175 CJ1.51.00.5 103.0󰀁V = 15VDS20µs PULSE WIDTH6.07.04.05.08.00.0-60-40-20VGS=10V󰀁020406080100120140160180V , Gate-to-Source Voltage (V)GS°T , Junction Temperature( C)JFig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature

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IRF3707/3707S/3707L

3000VCGS=0V,Cf = 1MHziss=gs+ Cgd ,C SHORTED2500󰀁C=CdsCrssgdoss=Cds+ Cgd)F󰀁C(p2000iss centaic1500pa CaC,C1000󰀁oss500C󰀁rss0 1 10 100V , Drain-to-Source Voltage (V)DSFig 5. Typical Capacitance Vs.

Drain-to-Source Voltage 1000)A( tn 100rer󰀁TJ = 175 C°Cu inraD 10 ser󰀁T = 25 CJ°veRe , D 1 SI0.1󰀁V = 0 V GS0.20.61.01.41.8V ,Source-to-Drain Voltage (V)SDFig 7. Typical Source-Drain DiodeForward Voltage

410󰀁ID=24.8AVDS= 15V)V( 8󰀁getalVo 6ceruSo-to-4teGa , S G2V0010203040Q , Total Gate Charge (nC)GFig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000󰀁OPERATION IN THIS AREA LIMITEDBY RDS(on)󰀁10usA) (t 100nerur󰀁100usC niaDr , 10󰀁1ms DI󰀁10ms T TC= 25 C° 1󰀁°Single PulseJ= 175 C 1 10 100V , Drain-to-Source Voltage (V)DSFig 8. Maximum Safe Operating Area

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IRF3707/3707S/3707L

7060VDSVGSRGRDD.U.T.+I , Drain Current (A)D50-VDD

10V4030Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %Fig 10a. Switching Time Test Circuit

20VDS10090%255075100125150175°T , Case Temperature( C)C10%VGStd(on)trtd(off)tfFig 9. Maximum Drain Current Vs.Case Temperature

Fig 10b. Switching Time Waveforms

10Thermal Response(Z t h J )C 1D = 0.500.200.100.050.10.020.01󰀁SINGLE PULSE(THERMAL RESPONSE)0.010.00001󰀁Notes:1. Duty factor D =t / t122. Peak TJ=PDMx ZthJC+ TC0.10.00010.0010.01 1󰀁PDMt1t2t , Rectangular Pulse Duration (sec)1Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF3707/3707S/3707L

RDS ( on ) , Drain-to-Source On Resistance ( Ω )0.090.080.070.060.050.040.030.020.010.00

0

50

100

150

200

250

ID , Drain Current ( A )

VGS = 10VVGS = 4.5VRDS(on), Drain-to -Source On Resistance (Ω)0.100.0130.0120.011ID = 31A0.0100.0094.05.06.07.08.09.010.0VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current

CurrentRegulatorSameTypeasD.U.T.Fig 13. On-Resistance Vs. Gate Voltage

50KΩ12V.2µF.3µFVGSQGSD.U.T.+V-DSQGQGDVGS3mAChargeIGIDEA S , Single Pulse Avalanche Energy (mJ)VG600500󰀁IDTOP10.1A 20.7A BOTTOM24.8A Fig 14a&b. Basic Gate Charge Test circuitand Waveforms40030020015VV(BR)DSStpVDSLDRIVER100RG20VD.U.TIAS+-VDD0A255075100125150175IAStp0.01Ω°Starting T , Junction Temperature( C)JFig 15a&b. Unclamped Inductive Test circuit

and WaveformsFig 15c. Maximum Avalanche Energy

Vs. Drain Current

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IRF3707/3707S/3707L

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)2.62 (.103)10.54 (.415)10.29 (.405)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)- B -4.69 (.185)4.20 (.165)1.32 (.052)1.22 (.048)415.24 (.600)14.84 (.584)1.15 (.045) MIN1 2 3LEADASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN14.09 (.555)13.47 (.530)4.06 (.160)3.55 (.140)3X3X1.40 (.055)1.15 (.045)0.93 (.037)0.69 (.027)3X0.55 (.022)0.46 (.018)0.36 (.014) M B A M2.54 (.100)2XNOTES:2.92 (.115)2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOTINCLUDEBURRS.TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1MAINTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODEPART NUMBERIRF101092469B 1MDATE CODE (YYWW)YY = YEARWW = WEEKwww.irf.com7

IRF3707/3707S/3707L

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)10.29 (.405)1.40 (.055) MAX.- A -24.69 (.185)4.20 (.165)- B -1.32 (.052)1.22 (.048)10.16 (.400) REF.6.47 (.255)6.18 (.243)15.49 (.610)14.73 (.580)5.28 (.208)4.78 (.188)2.79 (.110)2.29 (.090)2.61 (.103)2.32 (.091)1.39 (.055)1.14 (.045)8.89 (.350) REF.1.78 (.070)1.27 (.050)1 33X1.40 (.055)1.14 (.045)5.08 (.200)3X0.93 (.037)0.69 (.027)0.25 (.010) M B A M0.55 (.022)0.46 (.018)MINIMUM RECOMMENDED FOOTPRINT11.43 (.450)NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE8.89 (.350)17.78 (.700)3.81 (.150)2.08 (.082) 2X2.54 (.100) 2XD2Pak Part Marking Information

INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODEPART NUMBERF530S92469B 1MDATE CODE (YYWW)YY = YEARWW = WEEK8www.irf.com

IRF3707/3707S/3707L

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Informationwww.irf.com9

IRF3707/3707S/3707L

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR1.60 (.063)1.50 (.059)4.10(.161)3.90(.153)1.60 (.063)1.50 (.059)0.368 (.0145)0.342 (.0135)FEED DIRECTION1.85 (.073)1.65 (.065)11.60(.457)11.40(.449)15.42 (.609)15.22 (.601)24.30 (.957)23.90 (.941)TRL10.90 (.429)10.70 (.421)1.75 (.069)1.25 (.049)16.10 (.634)15.90 (.626)4.72 (.136)4.52 (.178)FEED DIRECTION13.50 (.532)12.80 (.504)27.40 (1.079)23.90 (.941)4330.00(14.173) MAX.60.00 (2.362) MIN.NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.30.40 (1.197) MAX.26.40 (1.039)24.40 (.961)43Notes:

󰀂 Repetitive rating; pulse width limited by

max. junction temperature.

󰀅 Pulse width ≤ 300µs; duty cycle ≤ 2%.

󰀄 This is only applied to TO-220AB package

󰀆 Starting TJ = 25°C, L = 0.7 mH

RG = 25Ω, IAS = 24.8 A.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

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IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 8/0010www.irf.com