专利名称：POWER SEMICONDUCTOR DEVICES发明人：Baik-woo LEE,Seong-woon BOOH申请号：US14093126申请日：20131129
公开号：US20140151744A1公开日：20140605
专利附图：
摘要：A power semiconductor device may comprise: a lower structure; a solder layeron the lower structure; a semiconductor structure on the solder layer; a contact layer onthe semiconductor structure; a pad layer on the contact layer; and/or a wire between thepad layer and the lower structure. The solder layer may be electrically connected to a
first electrode of the semiconductor structure.
申请人：Samsung Electronics Co., Ltd.
地址：Suwon-Si KR
国籍：KR
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