i(x,t) (1-1)tv(xx,t)i(xx,t)i(x,t)i(x,t)(Gx)v(xx,t)(Cx) (1-2)tv(xx,t)v(x,t)v(x,t)(Rx)i(x,t)(Lx)v(x,t)i(x,t)Ri(x,t)L (1-3)xti(x,t)v(x,t)Gv(x,t)C (1-4)xt 2v(x,t)i(x,t)2i(x,t)RL (1-5)x2xxt2i(x,t)v(x,t)2v(x,t)GC (1-6)2txtt 2v(x,t)v(x,t)2v(x,t)(RCLG)LCRGv(x,t)0 (1-7)x2tt22i(x,t)i(x,t)2i(x,t)(RCLG)LCRGi(x,t)0 (1-8)22xtt v(x,t)Re[V(x)ejwt] (1-9)i(x,t)Re[I(x)ejwt] (1-10) d2V(x)2jw(RCLG)V(x)(RGwLC)V(x)0 (1-11)2dxd2I(x)jw(RCLG)I(x)(RGw2LC)I(x)0 (1-12)2dx d2V(x)2V(x)0 (1-13)2dxd2I(x)2I(x)0 (1-14)2dxwhere 2(RjwL)(GjwC) wave propagation constant d2V(x)2xxV(x)0 V(x)VeVe (1-15)dt2(RjwL)(GjwC)j (1-16) 为衰减常数(attenuation constant)而为相位常数,而 dV(x)(RjwL)I(x)dx1dV(x)I(x)(VexVex) IexIexRjwLdxRjwLIRjwLV, IRjwLV Zo,定义为 Z0VVRjwLRjwLIIGjwCR=G=0,所以=j=jw(LC)1/2,传输线阻抗(characteristic impedance)及传输延迟时间 L Z o , TdLCC1.2 负载端的反射系数(reflection coefficience),L LVVV(x)VexVexreflectedV(x)VexV2x(x)eincidentV(x)VexV Le2x(0)图1.2 具有终端负载的传输线
沿着为 V(x)V(exLerx)VxI(x)(eLerx)Z0V(x)exLerxZ(x)Z0xI(x)eLerx 若负载端接上ZL的负载,则负载端的反射系数L及传输线路的径阻抗Z(x)为 1LZLZ0 and ΓL|L|ej1LZLZ01(x)Z(x)Z01(x)ZLZ0输入端的阻抗Zin为 elLel(ZLZ0)el(ZLZ0)elZinZ(l)Z0lZ0leLe(ZLZ0)el(ZLZ0)elZLjZ0tanhl Z0Z0jZLtanhl 对于无损失之传输线输入端的阻抗Zin为传输线长度、讯号频率、终端负载及传输线特性阻抗的函数。 ZinZ0ZLjZ0tanlZin(l,f,ZL,Z0)Z0jZLtanl对于图1.3结构之微带传输线(microstrip line)的特性阻抗及传输时间的近似值如下式,当0.1 二、ADS模拟步骤 1. 从Window XP 工具栏中开始程序集Advanced Design System 2005AADS ToolsLineCalc开启窗口。 设定【Substrate Parameters】Er=4.45, H=0.7mm,T=0.05mm, 【Component Parameters】Freq=1GHz, 【Electrical】Zo=50Ohm, E_Eff=90deg (1/4波长) 按下【Synthesize】图示,获得【Physical】W=1.28mm, L=41.3mm,如下图所示 50 1. 2. Z05.98hln 0.8wtr1.41873. 1.24 5050 4. Bottom layer Top layer 5. 将洗完之印刷电路板裁成适当大小,焊接上50之SMA接头,完成之实体图如下图所示。 6. 在以时域反射仪( Agilent 54753A, TDR )测量其传输线的特性阻抗,如下图为测量之接法。 7. 从反射图(如下图为实测之波形)即可得知传输线的特性阻抗为51.5。 SMA接头效应 开路反射 51.5 因篇幅问题不能全部显示,请点此查看更多更全内容