专利名称：METHOD AND STRUCTURE OF
MONOLITHICALLY INTEGRATED ESDSUPPERSSION DEVICE
发明人：Xiao (Charles) Yang申请号：US13410273申请日：20120301
公开号：US20130065387A1公开日：20130314
专利附图：
摘要：A method of fabricating ESD suppression device includes forming conductivepillars dispersed in a dielectric material. The gaps formed between each pillar in the
device behave like spark gaps when a high voltage ESD pulse occurs. When the voltage ofthe pulse reaches the “trigger voltage” these gaps spark over, creating a very lowresistance path. In normal operation, the leakage current and the capacitance is very low,due to the physical gaps between the conductive pillars. The proposed method forfabricating an ESD suppression device includes micromachining techniques to be on-chipwith device ICs.
申请人：Xiao (Charles) Yang
地址：Cupertino CA US
国籍：US
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