NON-VOLATILE MEMORY, SYSTEM INCLUDING THE MEMORY A

专利名称：NON-VOLATILE MEMORY, SYSTEM

INCLUDING THE MEMORY AND METHODFOR CONTROLLING THE MEMORY

发明人：Fabio Enrico Carlo Disegni,Maurizio

Francesco Perroni,Cesare Torti,MauroMaggiolini

申请号：US15598962申请日：20170518

公开号：US20180122470A1公开日：20180503

专利附图：

摘要：A non-volatile memory includes a number of bit lines, a number of source lines,and a number of memory cells of a non-volatile type. Each memory cell is coupledbetween a respective bit line and a respective source line. One or more discharge linesare coupled to a reference-voltage terminal. A number of controlled switches arecoupled between a respective source line and a respective discharge line, which can beselectively driven for connecting the respective source line to the respective dischargeline so as to form a conductive path between the respective source line and thereference-voltage terminal.

申请人：STMicroelectronics S.r.l.

地址：Agrate Brianza IT

国籍：IT

更多信息请下载全文后查看