专利名称：Chemical treatment of semiconductor
substrates
发明人：Li Li,Weimin Li申请号：US10913555申请日：20040806
公开号：US20050009308A1公开日：20050113
专利附图：
摘要：A method is disclosed for removing liquids from a semiconductor substrate bycontacting the liquid on the substrate with a liquid which attracts the liquid on thesubstrate, separating the liquids from the substrate, and inducing a phase transition in a
layer on the substrate. In particular, the method is applicable to removing water from awater-containing layer on the substrate by contacting the layer with a hygroscopic liquid.Trenches on a substrate can be isolated by filling the trenches with a water-containinggel formed by reacting silane and hydrogen peroxide. The gel is contacted with sulfuricacid to remove a portion of the water from the gel before annealing to form silica in thetrenches. Unlike filled trenches formed by conventional technology, there are no voids inthe bottom of the trenches. The method is also applicable to forming dielectric layerswhich cover metal lines, low-dielectric layers, and interlayer dielectric layers. The liquidmay be applied to the substrate by chemical vapor deposition or by spin-applying.
申请人：Li Li,Weimin Li
地址：Meridian ID US,Boise ID US
国籍：US,US
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