HERAF1001G - HERAF1008G
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AC.185(4.7).173(4.4).124(3.16).118(3.00).406(10.3).390(9.90).134(3.4)DIA.113(3.0)DIA.272(6.9).248(6.3).112(2.85).100(2.55)Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
.606(15.5).583(14.8).063(1.6)MAX.161(4.1).146(3.7).110(2.8).098(2.5).030(0.76).020(0.50).055(1.4).043(1.1).035(0.9).020(0.5).071(1.8)MAX.543(13.8).512(13.2)Mechanical Data Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed:
260oC/10 seconds 0.25”,(6.35mm) from case. Mounting torque : 5 in – 1bs. max. Weight: 2.24 grams
2.100(2.55).100(2.55)PIN 1PIN 2CASECase PositiveDimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage
Symbol
1001G 1002G 1003G 1004G 1005G 1006G1007G1008G
HERAFHERAFHERAFHERAFHERAF HERAF HERAF HERAF
Units
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
I(AV) 10 A Current @TC =100 oC
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated IFSM 150 A Load (JEDEC method )
Maximum Instantaneous Forward Voltage
VF 1.0 1.31.7 V @10.0A
Maximum DC Reverse Current
o
IR 10 uA@TA=25C at Rated DC Blocking Voltage
o
400 uA@ TA=125C
Maximum Reverse Recovery Time ( Note 1 ) Trr 50 80 nSTypical Junction Capacitance ( Note 2 ) Cj 80 60 pF
oTypical Thermal Resistance (Note 3) RθJC2.0 C/W
o
Operating Temperature Range TJ -65 to +150 C
o
Storage Temperature Range TSTG -65 to +150 C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
VRRM50VRMS35VDC 50100 200 30070140 210100 200 300400 600280 420400 600800 1000 V
560 700V 800 1000 V
Version: A06
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RATINGSANDCHARACTERISTICCURVES(HERAF1001GTHRUHERAF1008G)
AVERAGEFORWARDCURRENT.(A)FIG.1-MAXIMUMFORWARDCURRENTDERATING
CURVE
12108640
FIG.2-TYPICALREVERSECHARACTERISTICS
1000
INSTANTANEOUSREVERSECURRENT.(A)Tj=1250C10010Tj=250C050
CASETEMPERATURE.(C)
o
100150
PEAKFORWARDSURGECURRENT.(A)1501209060300FIG.3-MAXIMUMNON-REPETITIVEFORWARD
SURGECURRENTTj=250C8.3msSingleHalfSineWaveJEDECMethod10.1020406080100120140PERCENTOFRATEDPEAKREVERSEVOLTAGE.(%)
FIG.5-TYPICALFORWARDCHARACTERISTICS
100INSTANTANEOUSFORWARDCURRENT.(A)1004125102050100G3010AFNUMBEROFCYCLESAT60Hz
001GF1RAJUNCTIONCAPACITANCE.(pF)HE0.30.19060300
HERAF1006G~HERAF1001G~HERAF1005GRAF1008G0.030.010.412510205010020050010000.60.8HE120RAF11.0001506G1.0HE~HER1.2AF3.01008FIG.4-TYPICALJUNCTIONCAPACITANCE
GHE~HFRAER1005G1.41.61.8REVERSEVOLTAGE.(V)FORWARDVOLTAGE.(V)
FIG.6-REVERSERECOVERYTIMECHARACTERISTICANDTESTCIRCUITDIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr+0.5A
DUT(+)50Vdc(approx)(-)NONINDUCTIVE(-)PULSEGENERATOR(NOTE2)OSCILLOSCOPE(NOTE1)(+)0-0.25A
NOTES:1.RiseTime=7nsmax.InputImpedance=1megohm22pf2.RiseTime=10nsmax.SourseImpedance=
50ohms
-1.0A
1cmSETTIMEBASEFOR5/10ns/cmVersion:A06
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