专利名称：Organometallic precursors for the chemical
phase deposition of metal films ininterconnect applications
发明人：Harsono Simka,Juan Dominguez,Steven
Johnston,Adrien Lavoie,Kevin O'Brien
申请号：US11096860申请日：20050331公开号：US07220671B2公开日：20070522
专利附图：
摘要：Chemical phase deposition processes utilizing organometallic precursors toform thin films are herein described. The organometallic precursors may include a singlemetal center or multiple metal centers. The chemical phase deposition may be chemicalvapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use ofthese chemical phase deposition processes with the organometallic precursors allows forthe conformal deposition of films within openings having widths of less than 100 nm andmore particularly less than 50 nm to form thin films such as barrier layers, seed layers,
and adhesion layers.
申请人：Harsono Simka,Juan Dominguez,Steven Johnston,Adrien Lavoie,Kevin O'Brien
地址：Saratoga CA US,Hillsboro OR US,Portland OR US,St. Hellens OR US,Portland ORUS
国籍：US,US,US,US,US
代理机构：Blakely, Sokoloff, Taylor & Zafman LLP
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