Method of polishing metal and metaldielectric str

专利名称：Method of polishing metal and

metal/dielectric structures

发明人：Lothar Puppe,Gerd Passing,Kristina

Vogt,Valentina Terzieva

申请号：US10929227申请日：20040830

公开号：US20050026205A1公开日：20050203

摘要：A composition for the chemical-mechanical polishing of metal and

metal/dielectric structures, containing 7 to 100% by volume of a cationically stablilizedsilica sol which contains 30% by weight of SiOand the SiOparticles of which have a meanparticle size of less than 300 nm, with a pH of from 4 to 10, is distinguished by a TaNremoval rate of ≧40 nm per min and an improved barrier layer:metal selectivity of at least2:1 or greater and a barrier layer:dielectric selectivity of at least 2:1 or above.

申请人：Lothar Puppe,Gerd Passing,Kristina Vogt,Valentina Terzieva

地址：Burscheid DE,Koln DE,Lohmar DE,Heverlee BE

国籍：DE,DE,DE,BE

更多信息请下载全文后查看