BDX33B, BDX33C* (NPN)BDX34B, BDX34C* (PNP)
BDX33C and BDX34C are Preferred Devices
Darlington ComplementarySilicon Power Transistors
These devices are designed for general purpose and low speedswitching applications.
Features
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•High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0•Collector−Emitter Sustaining Voltage at 100 mAdc•••
VCEO(sus)= 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
VCE(sat)= 2.5 Vdc (max) at IC = 3.0 Adc
− BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt ResistorsPb−Free Packages are Available*
DARLINGTON10 AMPERE
COMPLEMENTARY SILICONPOWER TRANSISTORS80−100 VOLTS, 65 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34BBDX33C, BDX34CCollector−Base Voltage
BDX33B, BDX34BBDX33C, BDX34C
Emitter−Base VoltageCollector CurrentBase Current
Total Device Dissipation @ TC = 25_CDerate above 25°C
Operating and Storage JunctionTemperature Range
− Continuous− Peak
SymbolVCEO
Value80100
Vdc
801005.010150.25700.56−65 to +150
VdcAdcAdcWW/_C_C
BDX3xyGAY WWUnitVdc
12TO−220ABCASE 221A−09
STYLE 1
3VCB
VEBICIBPDTJ, Tstg
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
SymbolRqJC
Max1.78
Unit_C/W
BDX3xy=Device Code
x = 3 or 4y = B or C
A=Assembly LocationY=YearWW=Work WeekG=Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
1
See detailed ordering and shipping information in the packagedimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future useand best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
Publication Order Number:
BDX33B/D
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
80PD, POWER DISSIPATION (WATTS)60
40
20
0
02040
6080100120TC, CASE TEMPERATURE (°C)
140160
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
SymbolMinMaxUnitVdc
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100)Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)Collector Cutoff Current
(VCB = rated VCBO, IE = 0)Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
BDX33B/BDX34B
BDX33C/BDX34CBDX33B/BDX34BBDX33C/BDX33CBDX33B/BDX34BBDX33C/BDX34C
VCEO(sus)
801008010080100−−−−−
−−−−−−
VCER(sus)
Vdc
VCEX(sus)
Vdc
TC = 25_C
TC = 100_CTC = 25_CTC = 100_C
ICEO
mAdc
0.5101.05.010
ICBO
mAdc
IEBOmAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
hFEVCE(sat)VBE(on)VF
750−−−
−2.52.54.0
−VdcVdcVdc
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)Diode Forward Voltage
(IC = 8.0 Adc)
BDX33B, 33C/34B, 34CBDX33B, 33C/34B, 34C
1.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2.Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
r(t) EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED)1.00.70.50.30.2
D = 0.50.20.10.050.02t10.01SINGLE PULSEt2SINGLEPULSEP(pk)0.10.070.050.030.020.010.01RqJC(t) = r(t) RqJCRqJC = 1.92°C/WD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) − TC = P(pk) RqJC(t)501002003005001000DUTY CYCLE, D = t1/t20.050.10.20.30.51.02.03.05.010t, TIME OR PULSE WIDTH (ms)
20300.020.03Figure 1. Thermal Response
2010IC, COLLECTOR CURRENT (AMP)5.02.01.00.50.20.1
TC = 25°C5.0 ms1.0 msdc500 ms20IC, COLLECTOR CURRENT (AMP)105.02.01.00.50.20.1
TC = 25°C5.0 ms1.0 msdc500 ms100ms100msBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°C(SINGLE PULSE)SECOND BREAKDOWN LIMITEDCURVES APPLY BELOW RATED VCEOBDX34BBDX34C2.03.05.07.010203050VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70100BONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°C(SINGLE PULSE)SECOND BREAKDOWN LIMITEDCURVES APPLY BELOW RATED VCEOBDX33BBDX33C2.03.05.07.010203050VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
701000.050.02
1.00.050.02
1.0Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of atransistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC − VCE limitsof the transistor that must be observed for reliable operation,i.e., the transistor must not be subjected to greater dissipationthan the curves indicate. The data of Figure 3 is based on TJ(pk)
10,0005000300020001000500300200100503020101.02.0PNPNPN5.0102050100f, FREQUENCY (kHz)
2005001000TJ = 25°CVCE = 4.0 VdcIC = 3.0 Adc= 150_C; TC is variable depending on conditions. Secondbreakdown pulse limits are valid for duty cycles to 10%provided TJ(pk) = 150_C. TJ(pk) may be calculated from thedata in Figure4. At high case temperatures, thermallimitations will reduce the power that can be handled to valuesless than the limitations imposed by second breakdown.
300200C, CAPACITANCE (pF)hFE, SMALL−SIGNAL CURRENT GAINTJ = 25°C1007050PNPNPN0.2CibCob300.1Figure 3. Small−Signal Current Gain
0.51.02.05.01020VR, REVERSE VOLTAGE (VOLTS)
50100Figure 4. Capacitance
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
NPN
BDX33B, 33C
20,00010,000hFE, DC CURRENT GAIN5000300020001000
−55°C500300200
TJ = 150°C20,00010,000hFE, DC CURRENT GAIN5000300020001000500300200−55°C25°CTJ = 150°CPNP
BDX34B, 34C
VCE = 4.0 VVCE = 4.0 V25°C0.10.20.30.50.71.02.03.0IC, COLLECTOR CURRENT (AMP)
5.07.0100.10.20.30.50.71.02.03.0IC, COLLECTOR CURRENT (AMP)
5.07.010Figure 5. DC Current Gain
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)3.0
TJ = 25°C2.6
IC = 2.0 A2.21.81.41.0
4.0 A6.0 AVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)3.0TJ = 25°C2.6IC = 2.0 A2.21.81.41.04.0 A6.0 A0.30.50.71.02.03.05.07.010IB, BASE CURRENT (mA)
20300.30.50.71.02.03.05.07.0IB, BASE CURRENT (mA)
102030Figure 6. Collector Saturation Region
3.0
TJ = 25°CV, VOLTAGE (VOLTS)V, VOLTAGE (VOLTS)2.52.0
VBE(sat) @ IC/IB = 250VBE @ VCE = 4.0 VVCE(sat) @ IC/IB = 2500.10.20.30.50.71.02.03.05.07.0103.0TJ = 25°C2.52.0VBE @ VCE = 4.0 VVBE(sat) @ IC/IB = 250VCE(sat) @ IC/IB = 2500.10.20.30.50.71.02.03.05.07.0101.51.00.5
1.51.00.5IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
ORDERING INFORMATION
Device
BDX33BBDX33BGBDX33CBDX33CGBDX34BBDX34BGBDX34CBDX34CG
PackageTO−220TO−220(Pb−Free)TO−220TO−220(Pb−Free)TO−220TO−220(Pb−Free)TO−220TO−220(Pb−Free)
50 Units / Rail50 Units / Rail50 Units / Rail50 Units / RailShipping†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
PACKAGE DIMENSIONS
TO−220ABCASE 221A−09ISSUE AA
−T−B4SEATINGPLANEFTCSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES AREALLOWED.DIMABCDFGHJKLNQRSTUVZINCHESMINMAX0.5700.6200.3800.4050.1600.1900.0250.0350.1420.1470.0950.1050.1100.1550.0180.0250.5000.5620.0450.0600.1900.2100.1000.1200.0800.1100.0450.0550.2350.2550.0000.0500.045−−−−−−0.080BASE
COLLECTOREMITTERCOLLECTOR
MILLIMETERSMINMAX14.4815.759.6610.284.074.820.640.883.613.732.422.662.803.930.460.6412.7014.271.151.524.835.332.543.042.042.791.151.395.976.470.001.271.15−−−−−−2.04Q123AUKHZLVGDNRJSTYLE 1:
PIN 1.
2.3.4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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