Method of fabricating a fin field effect transisto

专利名称：Method of fabricating a fin field effect

transistor having a plurality of protrudingchannels

发明人：Sung-Min Kim,Eun-Jung Yun申请号：US11295770申请日：20051207公开号：US07285456B2公开日：20071023

专利附图：

摘要：In a method of fabricating a fin field effect transistor having a plurality ofprotruding channels, the fin field effect transistor is formed by forming a dummy gate

pattern on a first hard mask pattern and a first insulating layer on a semiconductorsubstrate having an active region pattern, forming a source and drain region in a portionof the active region pattern, forming a plurality of vertically protruding channels betweenthe source and drain region, forming a gate dielectric layer on the active region patternhaving the plurality of protruding channels, and forming a gate electrode on the gatedielectric layer.

申请人：Sung-Min Kim,Eun-Jung Yun

地址：Incheon-si KR,Seoul KR

国籍：KR,KR

代理机构：Mills & Onello LLP

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