METHOD OF MANUFACTURING THE SAME

专利名称：METHOD OF MANUFACTURING THE SAME发明人：Jong-Chul PARK,Jae-Hun SEO,Byong-Jae

BAE,Chang-Woo SUN

申请号：US14208912申请日：20140313

公开号：US20140273287A1公开日：20140918

专利附图：

摘要：A method of manufacturing magnetoresistive random access memory (MRAM)device includes foaming first and second patterns on a substrate in an alternating andrepeating arrangement, forming a first capping layer on top surfaces of the first and

second patterns, and removing first portions of the first capping layer and a portion ofthe second patterns thereunder to form first openings exposing the substrate. Themethod further includes forming source lines filling lower portions of the first openings,respectively, forming second capping layer patterns filling upper portions of the firstopenings, respectively, and removing second portions of the first capping layer and aportion of the second patterns thereunder to form second openings exposing thesubstrate. Then, contact plugs and pad layers are integrally formed and sequentiallystacked on the substrate to fill the second openings.

申请人：Jong-Chul PARK,Jae-Hun SEO,Byong-Jae BAE,Chang-Woo SUN

地址：Seongnam-si KR,Suwon-si KR,Hwaseong-si KR,Hwaseong-si KR

国籍：KR,KR,KR,KR

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