Method of fabricating a fin field effect transisto

专利名称：Method of fabricating a fin field effect

transistor

发明人：Byeong Ryeol Lee申请号：US11024518申请日：20041228

公开号：US20050142738A1公开日：20050630

专利附图：

摘要：A method of fabricating a fin field effect transistor is disclosed. An examplemethod forms a thermal oxide layer as a hard mask for etching a silicon fin on an SOIsubstrate, transcribes a fin pattern, forms a fin FET body by etching using the fin pattern

as an etch mask, and restores a sidewall damaged by the etching remove a sacrificialsilicon oxide layer. The example method also deposits a high-K dielectric as a gatedielectric, deposits a metal layer, planarizes the metal layer to a height of a hard oxide,forms a nitride layer on the planarized metal layer, and patterns the nitride layer using ahard mask for forming a pattern to form a nitride layer pattern. Additionally, the

example method forms a metal gate using the nitride layer pattern, removes a remaininghard oxide mask, and grows a sidewall oxide layer on the metal gate.

申请人：Byeong Ryeol Lee

地址：Seoul KR

国籍：KR

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