专利名称：III-V FINFETS ON SILICON SUBSTRATE发明人：ANIRBAN BASU,CHENG-WEI CHENG,AMLAN
MAJUMDAR,RYAN M. MARTIN,UZMARANA,DEVENDRA K. SADANA,KUEN-TINGSHIU,YANNING SUN
申请号：US13967102申请日：20130814
公开号：US20140264446A1公开日：20140918
专利附图：
摘要：A method for forming fin field effect transistors includes forming a dielectric
layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layerdown to the substrate, the high aspect ratio including a height to width ratio of greaterthan about 1:1 and epitaxially growing a non-silicon containing semiconductor material inthe trenches using an aspect ratio trapping process to form fins. The one or moredielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxiallygrown on the portion of the fins, and a gate stack is formed over the fins. A spacer isformed around the portion of the fins and the gate stack. Dopants are implanted into theportion of the fins. Source and drain regions are grown over the fins using a non-siliconcontaining semiconductor material.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
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