专利名称：High-voltage bipolar-CMOS-DMOS
integrated circuit devices and modularmethods of forming the same
发明人：Richard K. Williams,Donald Ray Disney申请号：US11982793申请日：20071105
公开号：US20080061368A1公开日：20080313
专利附图：
摘要：All low-temperature processes are used to fabricate a variety of semiconductordevices in a substrate the does not include an epitaxial layer. The devices include a non-
isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateraltrench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diodeclamps and rectifiers and junction terminations. Since the processes eliminate the needfor high temperature processing and employ “as-implanted” dopant profiles, theyconstitute a modular architecture which allows devices to be added or omitted to the ICwithout the necessity of altering the processes used to produce the remaining devices.
申请人：Richard K. Williams,Donald Ray Disney
地址：Cupertino CA US,Cupertino CA US
国籍：US,US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容