专利名称：CRYSTAL GROWING DEVICE AND METHOD
OF MANUFACTURING SINGLE CRYSTAL
发明人：MAEDA, HIROSHI,HIRANO,
RYUICHI,YAMAMOTO, TETSUYA,HICHIWA,AKIRA,KUBOTA, YOSHIAKI
申请号：EP00944253申请日：20000705公开号：EP1143040A4公开日：20040512
摘要：A crystal growth apparatus comprising a heating furnace capable of controllinguniformly the temperature distribution in the same horizontal plane, and a method forproducing a single crystal by using the crystal growth apparatus are provided. In thecrystal growth apparatus comprising a cylindrical heating furnace (110) having pluralheaters (101, 102, 103 and 104) laminated in multi-stage in an axial direction (Z), eachheater is disposed for the terminal portions of the adjacent heaters not to be overlappedin the same position, but to be in a mutually separated position, seeing from the axialdirection of the heating furnace. Concretely, in case of N (n is a positive integer of threeor more) heaters, each heater (101, 102, 103 and 104) is disposed for the terminalportions (101a, 102a, 103a and 104a) of the heaters to be located at each apex of aregular n-gon (n is an integer satisfying 3
申请人：NIKKO MATERIALS COMPANY, LIMITED,HIROCHIKU CO., LTD.
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