专利名称：Graphite and/or graphene semiconductor
devices
发明人：Arthur Foster Hebard,Sefaattin Tongay申请号：US13577964申请日：20110314公开号：US08890277B2公开日：20141118
专利附图：
摘要：Various embodiments are provided for graphite and/or graphene basedsemiconductor devices. In one embodiment, a semiconductor device includes a
semiconductor layer and a semimetal stack. In another embodiment, the semiconductor
device includes a semiconductor layer and a zero gap semiconductor layer. Thesemimetal stack/zero gap semiconductor layer is formed on the semiconductor layer,which forms a Schottky barrier. In another embodiment, a semiconductor device includesfirst and second semiconductor layers and a semimetal stack. In another embodiment, asemiconductor device includes first and second semiconductor layers and a zero gapsemiconductor layer. The first semiconductor layer includes a first semiconductingmaterial and the second semi conductor layer includes a second semiconducting materialformed on the first semiconductor layer. The semimetal stack/zero gap semiconductorlayer is formed on the second semiconductor layer, which forms a Schottky barrier.
申请人：Arthur Foster Hebard,Sefaattin Tongay
地址：Gainesville FL US,Albany CA US
国籍：US,US
代理机构：Thomas | Horstemeyer, LLP.
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