专利名称：Quantum well photorefractive device发明人：LAMBERT, BERTRAND,LE CORRE,
ALAIN,GRAVEY, PHILIPPE
申请号：EP96400724.9申请日：19960404公开号：EP0736791A1公开日：19961009
专利附图：
摘要：The semiconductor structure includes a substrate (10) with a surface layer ofIndium Phosphide (20). A distributed Bragg layer (30) on the Indium Phosphide surface.The quantum well layer (50) is sandwiched between an upper (60) and lower (40) trap
layer. The trap layers trap charge current generated by the quantum well layerincreasing the quantum well effect. There is an upper metal layer (70) above thestructure.
申请人：FRANCE TELECOM
地址：6, Place d'Alleray 75015 Paris FR
国籍：FR
代理机构：Texier, Christian
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