专利名称：A method of estimating initial values of
potential in semiconductor device simulation
发明人：Yokota, Ikuhiro,Kumashiro, Shigetaka申请号：EP95114255.3申请日：19950911公开号：EP0701221A3公开日：19960904
专利附图：
摘要：In order to estimate an initial potential value for semiconductor devicesimulation at each of iterative procedures a computer system, a plurality of bias
conditions are stored in a memory. Following this, one bias condition is retrieved from the
memory at a given iterative procedure. Further, an analysis result already obtained in aniterative procedure, which precedes the given iterative procedure, is retrieved from thememory. Subsequently, an initial potential value is estimated which is used in the giveniterative procedure by solving a Laplace equation which is weighted by a coefficientincluding a reciprocal of electric field intensity.
申请人：NEC CORPORATION
地址：7-1, Shiba 5-chome Minato-ku Tokyo JP
国籍：JP
代理机构：Baronetzky, Klaus, Dipl.-Ing.
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