专利名称：Dielectric barrier discharge method for
depositing film on substrates
发明人：Carmela C. Amato-Wierda申请号：US11210589申请日：20050824
公开号：US20050281951A1公开日：20051222
专利附图：
摘要：A method of coating at least one wafer with film. The method includes firstflowing at least one purge gas and at least one reactant gas at least partially through anactivation space of at least one electrode set. Next, placing a wafer beneath the
activation space of the at least one electrode set. Finally, supplying AC power to at leastone electrode set whereby a dielectric barrier is discharged at least partially within theactivation space, from which the film descends onto the wafer.
申请人：Carmela C. Amato-Wierda
地址：Durham NH US
国籍：US
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