PW3467内阻5mΩ场效应管规格书

GENERAL DESCRIPTION

The PW3467 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

D FEATURES

VDS = 30V ID =67A

RDS(ON) < 5.5mΩ @ VGS=10V

Available in a 8-Pin DFN3*3 Package

G S Top View

SSSG1 2 8 7 DDDD3 4 6 5 DFN3*3-8L

Absolute Maximum Ratings

Parameter Drain-Source Voltage Gate-Source Voltage ( unless otherwise noted) TC=25℃

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ Rating 30 ±20 70 51 15 12 160 59 2 -55 To 150 -55 To 155 115.2 48 2.1 62 Unit V V A A A A A W W ℃ ℃ mJ A ℃/W ℃/W Continuous Drain Current，VGS @ 10V (NOTE1) Continuous Drain Current, VGS @ 10V (NOTE1) Continuous Drain Current，VGS @ 10V (NOTE1) Continuous Drain Current, VGS @ 10V (NOTE1) Pulsed Drain Current (NOTE2) Total Power Dissipation (NOTE3) Total Power Dissipation (NOTE3) Storage Temperature Range Operating Junction Temperature Range Single pulse avalanche energy (NOTE4) Avalanche Current Thermal Resistance Junction-Case (NOTE1) Thermal Resistance Junction-ambient (NOTE1) IDM PD @TC=25℃ PD @TA=25℃ TSTG TJ EAS IAS RθJC RθJA PW3467_2.0

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PW3467 ELECTRICAL CHARACTERISTICS(TJ = 25°C, unless otherwise noted.)

Parameter Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Drain-Source Leakage Current Gate- Source Leakage Current Gate Threshold Voltage Symbol BVDSS Condition VGS=0V ID=250μA Min Typ Max 30 1.0 Unit V V/℃ μA μA V mV/℃ mΩ mΩ S Ω nC nC nC nS nS nS nS V A A nS nC PF PF PF △BVDSS/△TJ Reference to 25℃ , ID=1mA IDSS IDSS IGSS VGS(th) VDS=24V,VGS=0V TJ=25℃ VDS=24V,VGS=0V TJ=55℃ VGS=±20V,VDS=0V VDS=VGS,ID=250μA VDS=VGS,ID=250μA VGS=4.5V, ID=15A 0.028 1 1.6 5 2.5 ±100 nA VGS(th) Temperature Coefficient △VGS(th) Static Drain-Source On- Resistance Static Drain-Source On- Resistance Forward Transconductance Gate Resistance Total Gate Charge（4.5V） Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time -6.16 6.5 3.5 22 1.7 20 7.6 7.2 7.8 15 37.3 10.6 14 5 8.5 5.5 3.4 1 80 160 RDS(ON) RDS(ON) gFS Rg Qg Qgs Qgd td(on) tr td(off) tf VGS=10V, ID=30A VDS=5V,ID=30A VDS=0V , VGS=0V , f=1MHz VGS=4.5V,VDS=15V,ID=15A VGS=10V,VDD=15V RG=3. 3Ω,ID=15A Diode Forward Voltage (Note 2) VSD Continuous Source Current(NOTE1,5) Pulsed Source Current(NOTE2,5) Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Note :

VGS=0V,IS=1A TJ=25℃ VG=VD=0V , Force Current VG=VD=0V , Force Current TJ = 25°C, IF = 30A di/dt = 100A/μs VDS=15V,VGS=0V, F=1.0MHz IS ISM trr Qrr Ciss Coss Crss 2295 267 210 1、 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、 The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、 The power dissipation is limited by 175℃ junction temperature

4、 The test condition is V≦ 300us , duty cycle DD=25≦ V,V 2%GS =10V,L=0.1mH,IAS=53.8A

5、 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation

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PW3467_2.0

PW3467 Typical Characteristics

30180 VGS=10VVGS=7VVGS=5VVGS=3VVGS=4.5V12150TJ=150℃9TJ=25℃ID Drain Current (A)120 IS(A) 906603 000.511.522.53000.30.60.91.2

9VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics

VSD , Source-to-Drain Voltage (V)

Fig.2Forward Characteristics Of Reverse

1.8

RDSON (mΩ)ID=12ANormalized On Resistance1.48 6 51.00.6 30.2246810

-50-54085130175

VGS (V)

TJ , Junction Temperature (℃)Fig.3 On-Resistance vs. G-S Voltage Fig.4 Normalized RDSON vs. TJ

1.8 Normalized VGS(th)1.4 10ID=15A VGS , Gate to Source Voltage (V)86VDS=15VVDS=24V14 0.6 0.2-50-502 0 QG , Total Gate Charge (nC) T J ,Junction Temperature (℃ )

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Gate-Charge Characteristics 0500 50 100100 150 06121824303642PW3467_2.0

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PW3467

10000F=1.0MHz

Capacitance (pF)

Ciss1000

Coss100Crss

1015913172125VDS , Drain to Source Voltage (V)

Fig.7 Capacitance

Fig.8 Safe Operating Area

1L x IAS2 x2BVDSSBVDSS-VDDVDD 90%

10% VGS Td(on)TrTd(off)Tf TonToff

Switching Time Waveform Fig.9

VDSEAS=BVDSSIAS

VGS

Fig.10 Unclamped Inductive Switching Waveform

Normalized Thermal Response (RθJC)

1DUTY=0.5

0.20.1 0.1 0.05 0.020.01 0.01SINGLE 0.0010.00001

PDMTONTD = TON/TTJpeak = TC+PDMXRθJC0.00010.0010.010.1110t , Pulse Width (s)Fig.11 Normalized Maximum Transient Thermal Impedance

PW3467_2.0

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PW3467 PACKAGE DESCRIPTION DFN3*3-8L

Symbol A A1 b c D D1 D2 E E1 E2 E3 E4 E5 e K L L1 t Φ Mim 0.70 / 0.20 0.10 3.15 3.00 2.29 3.15 2.90 1.54 0.28 0.37 0.10 0.60 0.59 0.30 0.06 0 10 Common mm Nom 0.75 / 0.30 0.152 3.30 3.15 2.45 3.30 3.05 1.74 0.48 0.57 0.20 0.65 0.69 0.40 0.125 0.075 12 Max 0.85 0.05 0.40 0.25 3.45 3.25 2.65 3.45 3.20 1.94 0.65 0.77 0.30 0.70 0.89 0.50 0.20 0.13 14 PW3467_2.0

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