TransFeed
AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
GENERAL DESCRIPTION
AVX has combined the best electrical characteristics of itsTransGuard Transient Voltage Suppressors (TVS) and itsFeedthru Capacitors into a single chip for state-of-the-artovervoltage circuit protection and EMI reduction over abroad range of frequencies. This unique combination ofmultilayer ceramic construction in a feedthru configurationgives the circuit designer a single 0805 chip that respondsto transient events faster than any TVS device on the mar-ket today, and provides significant EMI attenuation when inthe off-state.
The reduction in parallel inductance, typical of the feedthruchip construction when compared to the construction ofstandard TVS or ceramic capacitor chips, gives theTransFeed product two very important electrical advan-tages: (1) faster “turn-on” time. Calculated response timesof <200 pSec are not unusual with this device, and mea-sured response times range from 200 – 250 pSec. TheTransFeed “turn-on” characteristic is less than half that ofan equivalent TransGuard part — and TransGuards clamptransient voltages faster than any other bipolar TVS solutionsuch as diodes; (2) the second electrical advantage oflower parallel inductance, coupled with optimal seriesinductance, is the enhanced attenuation characteristics ofthe TransFeed product. Not only is there significantlygreater attenuation at a higher self-resonance frequency,but the roll-off characteristic becomes much flatter, result-ing in EMI filtering over a much broader frequency spec-trum. Typical applications include filtering/protection onMicrocontroller I/O Lines, Interface I/O Lines, Power LineConditioning and Power Regulation.
Schematic DiagramINOUTElectrical ModelINRVLSLSCRONLPOUTRPTYPICAL APPLICATIONS
• Fingerprint IDCircuit• Magnetic Field Circuit• LCDDashboard Driver
Where designers are concerned with both transient voltageprotection and EMI attenuation, either due to the electricalperformance of their circuits or due to required complianceto specific EMC regulations, the TransFeed product is anideal choice.
HOW TO ORDER
V
Varistor
2F
FeedthruCapacitor
105
Voltage
05 =5.6VDC09 =9.0VDC14 = 14.0VDC18 = 18.0VDC
A150
VaristorClampingVoltage
150 = 18V200 = 22V300 = 32V400 = 42V500 = 50V
Y2
DCResistance
1 = 0.150 Ohms2 = 0.200 Ohms3 = 0.250 Ohms
ED
PackagingCodePcs./Reel
D = 1,000R = 4,000T = 10,000
P
Chip Size
2 = 08053 = 0612
No. ofElementsEnergyRating
X = 0.05JA = 0.1JC = 0.3J
CapacitanceTolerance
Y = +100/-50%
FeedthruCurrent
D = 500 mAE = 750 mAF = 1.0 Amp
Termination Finish
P = Ni/Sn Alloy (Plated)M = Ni/Sn Pb (Plated)
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TransFeed
AVXPart NumberV2F105A150Y2E _ _V2F105C150Y1F _ _V2F109A200Y2E _ _V2F109C200Y1F _ _V2F114A300Y2E _ _V2F114C300Y1F _ _V2F118A400Y2E _ _V2F118C400Y1F _ _V2F118X500Y3D _ _V3F418A400Y3G _ _V3F418C400Y3G _ _AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
TRANSFEED ELECTRICAL SPECIFICATIONS (0805 CHIP SIZE)
WorkingWorkingBreakdownClampingMaximumVoltageVoltageVoltageVoltageLeakage (DC)(AC)Current5.65.69.09.014.014.018.018.018.018.018.04.04.06.46.410.010.013.013.013.013.013.08.5±20%8.5±20%12.7±15%12.7±15%18.5±12%18.5±12%25.5±10%25.5±10%25.5±10%25.5±10%25.5±10%18182222323242425042503535252515151010101010TransientEnergyRating0.100.300.100.300.100.300.100.300.050.100.05Peak TypicalCurrentCapRating30120301203012030120202015800250057518003009002005007515065DCResistance0.2000.1500.2000.1500.2000.1500.2000.1500.2500.2000.250MaximumFeedthruCurrent0.751.000.751.000.751.000.751.000.500.300.20Termination Finish CodePackaging CodeVW(DC)VW(AC)VBVB TolVCILETIPCapDCRIFTDC Working Voltage (V)AC Working Voltage (V)
Typical Breakdown Voltage (V@ 1mADC)VB Tolerance is ±fromTypical ValueClamping Voltage (V@ 1A 8x20µS)
Maximum Leakage Current at the Working Voltage (µA)Transient EnergyRating (J, 10x1000µS)Peak Current Rating (A, 8x20µS)
Typical Capacitance (pF) @ 1MHz and 0.5 VDC Resistance (Ohms)
Maximum Feedthru Current (A)
dB Attenuation vs Frequency
018LC-1018A14A9ATransFeed 0.1J0
TransFeed 0.3J-10
18C-20-20
14C-30
-30(dB)5A-40(dB)9C-40
5C-50-50
-60-60
-700.010.1Frequency (GHz)
110-700.01
0.1
Frequency (GHz)
110
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TransFeed
DIMENSIONSL0805AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
mm (inches)WT1.143Max.(0.045 Max.)BWBLEWXS2.01 ±0.201.25 ±0.20(0.079 ±0.008)(0.049 ±0.008)0.46 ±0.100.18 + 0.25 -0.080.25 ±0.131.02 ±0.100.23 ±0.05(0.018 ±0.004)(0.007 + 0.010 -0.003)(0.010 ±0.005)(0.040 ±0.004)(0.009 ±0.002)LSXTBWCLBLWEWRECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions)T08053.45 (0.136)mm (inches)L1.02 (0.040)P0.51 (0.020)S0.76 (0.030)W1.27 (0.050)C0.46 (0.018)4 Pad Layout
TPPWOUTPUTSINPUTCL40
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TransFeed Array - V3F4 Series
TVSProtection and EMI Attenuation in a 4-Element Array
WPATCBDEDESBLLAFBWV3F4DIMENSIONSL1.60 ±0.20(0.063 ±0.008)mm (inches)
WT1.22Max.(0.048 Max.)BW0.41 ±0.10(0.016 ±0.004)BL0.18 +0.25 -0.08(0.007 +0.010 -0.003)ES0.41 ±0.10(0.016 ±0.004)P0.76 REF(0.030 REF)3.25 ±0.15(0.128 ±0.006)mm (inches)A0.60 (0.024)B1.60 (0.064)C2.20 (0.088)D0.35 (0.014)E0.76 (0.030)F2.60 (0.104)41
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TransFeed
AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
INSERTION LOSS COMPARISON(TransFeed vs TransGuard)
0805 – dB vs Frequency
0-10-20(dB)(dB)-30-40-50-60-700.01
0.1
Frequency (GHz)
0-10-20(dB)-30-40-50-600.01
0.1
Frequency (GHz)
0-10-20(dB)(dB)-30-40-50-60-700.01
0.1
Frequency (GHz)
18V, 0.3JVC080518C400V2F105C150Y1F5.6V, 0.3J0-10-20-30-40-50-60
10
-700.01
0.1
Frequency (GHz)
V2F114C300Y1FV2F118A400Y2E1
10
(dB)18V, 0.1JVC080518A4000-10-20-30-40-50-60-700.01
0.1
Frequency (GHz)
14V, 0.3JVC080514C3001
10
V2F118X500Y3D1
10
V2F105A150Y2E5.6V, 0.1JVC080505A1500-10-20-30-40-50-600.01
0.1
Frequency (GHz)18V, 0.05JVC08LC18A500V2F114A300Y2E1
10
14V, 0.1JVC080514A300VC080505C1501110
0-10-20(dB)-30-40-50-60-700.01
0.1
V2F118C400Y1F110
Frequency (GHz)
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TransFeed
AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
CURRENT vsTEMPERATURE
0805 – 0.1 Joule
30
)C°( erutaDashedNote:re18Vpm18LC
14V
Not Guaranteed
Portions
Te25
tnenopm5VoC9V
20
0.30.5
0.751
Current (Amps)
CURRENT vsTEMPERATURE
0805 – 0.3 Joule
30
)C°( erutarep18V
m25
Te tn14Veno5V
pmoC20
00.25
0.5
0.751
Current (Amps)
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TransFeed
AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICSFEEDTHRU VARISTORS
AVX Multilayer Feedthru Varistors (MLVF) are an ideal choicefor system designers with transient strike and broadbandEMI/RFI concerns.
Feedthru Varistors utilize a ZnO varistor material and the electrode pattern of a feedthru capacitor. This combinationallows the package advantage of the feedthru and materialadvantages of the ZnO dielectric to be optimized.
ZnO MLV Feedthrus exhibit electrical and physical advantagesover standard ZnO MLVs. Among them are:1. Faster Turn on Time
2. Broadband EMIattenuation
3. Small size (relative to discrete MLV and EMI filter schemes)
The electrical model for a ZnO MLV and a ZnO Feedthru MLVare shown below. The key difference in the model forthe Feedthru is a transformation in parallel to series induc-tance. The added series inductance helps lower the injectedtransient peak current (by 2πfL) resulting in an additional ben-efit of a lower clamping voltage. The lowered parallel induc-tance decreases the turn on time for the varistor to <250ps.
Discrete MLV Model
PCBTraceLPRVTo DeviceRequiringProtectionSolder PadDiscrete MLVF Model
To DeviceRequiringProtection
Solder PadCRonLPSolder PadRPLSLSCRVRPRonSolder PadWhere:Rv
Rp
=≥Voltage Variable resistance(per VI curve)1012Ω
defined by voltage rating and energy levelturn on resistance
parallel body inductance
Where:Rv
RpCRonLpLs
======
Voltage Variable resistance(per VI curve)Body IR
defined by voltage rating and energy levelturn on resistance
minimized parallel body inductanceseries body inductance
C=Ron=Lp=
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TransFeed
AVX Multilayer Ceramic Transient Voltage SuppressorsTVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICSAPPLICATIONS
• EMI Suppression
• Broadband I/O Filtering• Vcc Line Conditioning
MARKET SEGMENTS
• Computers• Automotive• Power Supplies
• Multimedia Add-On Cards• Bar Code Scanners• Remote Terminals
• Medical Instrumentation• Test Equipment• Transceivers
• Cellular Phones / Pagers
TYPICAL CIRCUITS REQUIRINGTRANSIENT VOLTAGE
PROTECTION AND EMI FILTERING
The following applications and schematic diagramsshow where TransFeed TVS/ EMI filtering devices mightbe used:
• System Board Level Interfaces: (Fig. 1)
Digital to RFAnalog to DigitalDigital to Analog
• Voltage Regulation (Fig. 2)• Power Conversion Circuits (Fig. 3)• GaAs FET Protection (Fig. 4)
FEATURES
• Small Size• Low ESR
• Ultra-fast Response Time• Broad S21 Characteristics
Fig. 1 – System InterfaceFig. 2 – Voltage Regulators
REGULATOR+Sensor/Keyboard/Touchscreen InputDIGITALBOARDBy X BusRF BOARDFig. 3 – Power Conversion Circuits/Power Switching Circuits
+3.3VSensor InputDisplayMAINPOWER+5VANALOGBOARDDIGITALBOARDPOWERMANAGEMENT+3.3VCHIPINTERFACECARD+1.8V+12VKeyboardDIGITALBOARDANALOGBOARDASICFig. 4 – GaAs FET Protection
SPECIFICATION COMPARISON
MLVF08055ph<600nh<0.025Ω100pf to 2.5nfsee VI curves>0.25 x 1012Ω<250psLsLpRonCRvRpPARAMETERtypicaltypicaltypicaltypicaltypicaltypicalN/A<1.5nh<0.1Ω100pf to 5.5nfsee VI curves>1 x 1012Ω<500psMLV0805INPUTOUTPUTTypical turn on timeTypical frequency responseA comparison table showing typical element parameters and resulting performance features for MLV and MLVF is shown above.
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