CR05AS-8
Thyristor
Low Power Use
REJ03G0543-0100
Rev.1.00 Mar.01.2005
Features
• IT (AV) : 0.5 A • VDRM : 400 V • IGT : 100 µA
• Non-Insulated Type • Planar Passivation Type
Outline
PLZZ0004CA-A(Package name: UPAK)1232, 44311. Cathode2. Anode3. Gate4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Voltage class
Parameter Symbol Unit
8 (Mark CD)
Repetitive peak reverse voltage VRRM 400 V Non-repetitive peak reverse voltage VRSM 500 V DC reverse voltage VR (DC) 320 V Repetitive peak off-state voltageNote1 VDRM 400 V DC off-state voltageNote1 VD (DC) 320 V
Rev.1.00, Mar.01.2005, page 1 of 7
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CR05AS-8
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.79 A Average on-state current IT (AV) 0.5 A Commercial frequency, sine half wave
Note2
180° conduction, Ta = 57°C
Surge on-state current ITSM 10 A 60Hz sine half wave 1 full cycle,
peak value, non-repetitive
222It for fusing It 0.4 As Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.1 W Average gate power dissipation PG (AV) 0.01 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current IFGM 0.1 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 50 mg Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Rated value
Parameter Symbol Unit Test conditions Min. Typ. Max. Repetitive peak reverse current IRRM — — 0.1 mA Tj = 125°C, VRRM applied Repetitive peak off-state current IDRM — — 0.1 mA Tj = 125°C, VDRM applied,
RGK = 1 kΩ
On-state voltage VTM — — 1.9 V Ta = 25°C, ITM = 1.5 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V,
Note4
IT = 0.1 A
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Note3Gate trigger current IGT 20 — 100 µA Tj = 25°C, VD = 6 V,
Note4
IT = 0.1 A
Holding current IH — — 3 mA Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance Rth (j-a) — — 70 °C/W Junction to ambientNote2 Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 3. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item B E IGT (µA) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode.
4. IGT, VGT measurement circuit.
A1IGS3VDCA3RGK11kΩSwitchIGTA22V1VGTTUT6VDC60ΩSwitch 1 : IGT measurementSwitch 2 : VGT measurement(Inner resistance of voltage meter is about 1kΩ)
Rev.1.00, Mar.01.2005, page 2 of 7
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CR05AS-8
Performance Curves
Maximum On-State Characteristics1027Ta = 25°C5321017532100753210–101234510Rated Surge On-State CurrentSurge On-State Current (A)98765432101002345710123457102On-State Current (A)On-State Voltage (V)Conduction Time (Cycles at 60Hz)Gate Trigger Current vs. Junction Temperature103753210275321017532100–60–40–200204060801001201401027532753275327532× 100 (%)Gate CharacteristicsTypical ExampleGate Voltage (V)101PG(AV) = 0.01WVGT = 0.8VIGT = 100µA(Tj = 25°C)VGD = 0.2VIFGM = 0.1A10010–110–210–2235710–1235710023571012357102Gate Current (mA)Gate Trigger Current (Tj = t°C)Gate Trigger Current (Tj = 25°C)VFGM = 6VPGM = 0.1WJunction Temperature (°C)Gate Trigger Voltage vs. Junction Temperature1.00.9Maximum Transient Thermal ImpedanceCharacteristics (Junction to ambient)0.80.70.60.50.40.30.20.1DistributionTypical ExampleTransient Thermal Impedance (°C/W)Gate Trigger Voltage (V)100235710123571022357103103725×25×t0.75Aluminum Board321027532101753210010–3235710–2235710–123571000–40–20020406080100120140160Junction Temperature (°C)Time (s)
Rev.1.00, Mar.01.2005, page 3 of 7
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CR05AS-8
Allowable Ambient Temperature vs.Average On-State Current(Single-Phase Half Wave)160Maximum Average Power Dissipation(Single-Phase Half Wave)1.5Average Power Dissipation (W)Ambient Temperature (°C)θ = 30°60°90°120°180°1.025×25×t0.7140Aluminum Board12010080604020000.2θ360°Resistive,inductive loadsNatural convection0.5θ360°Resistive,inductive loads00.10.20.30.40.50.60.70.8θ = 30°60°90°180°120°00.40.60.8Average On-State Current (A)Maximum Average Power Dissipation(Single-Phase Full Wave)160Average On-State Current (A)Allowable Ambient Temperature vs.Average On-State Current(Single-Phase Full Wave)25×25×t0.7140Aluminum Board1201008060402000Average Power Dissipation (W)1.5Ambient Temperature (°C)90°θ = 30°60°120°180°θθ360°Resistive loadsNatural convection1.00.5θθ360°060°θ = 30°0.20.4120°90°0.6180°0.8Resistive loads00.10.20.30.40.50.60.70.8Average On-State Current (A)Average On-State Current (A)Allowable Ambient Temperature vs.Average On-State Current(Rectangular Wave)160Maximum Average Power Dissipation(Rectangular Wave)Average Power Dissipation (W)1.5Ambient Temperature (°C)90°180°θ = 30°60°120°270°DC25×25×t0.7140Aluminum Board12010080604020000.2θ360°1.0Resistive, inductive loadsNatural convection0.5θ360°DCθ = 30°60°120°90°0.4270°180°0.60.800Resistive,inductive loads0.10.20.30.40.50.60.70.8Average On-State Current (A)Average On-State Current (A)
Rev.1.00, Mar.01.2005, page 4 of 7
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CR05AS-8
Breakover Voltage vs.Junction TemperatureBreakover Voltage vs.Gate to Cathode Resistance12010080604020010–1235710023571012357102× 100 (%)16014012010080604020× 100 (%)Typical ExampleTypical ExampleTj = 125°CRGK = 1kΩ0–40–20020406080100120140160Breakover Voltage (RGK = rkΩ)Breakover Voltage (RGK = 1kΩ)Breakover Voltage (Tj = t°C)Breakover Voltage (Tj = 25°C)Junction Temperature (°C)Breakover Voltage vs.Rate of Rise of Off-State Voltage120100806040102753210175321007532Gate to Cathode Resistance (kΩ)× 100 (%)Holding Current vs.Junction TemperatureTj = 25°CIH (25°C) = 1mAIGT(25°C) = 25µABreakover Voltage (dv/dt = vV/µs)Breakover Voltage (dv/dt = 1V/µs)Holding Current (mA)DistributionTypical Example# 2# 1Typical Example20 # 1 IGT(25°C = 10µA) # 2 IGT(25°C = 66µA) Tj = 125°C, RGK = 1kΩ 010023571012357102235710310–1–60–40–20020406080100120140Rate of Rise of Off-State Voltage (V/µs)Junction Temperature (°C)500400# 1300Repetitive Peak Reverse Voltage (Tj = t°C)Repetitive Peak Reverse Voltage (Tj = 25°C)× 100 (%)Holding Current vs.Gate to Cathode ResistanceRepetitive Peak Reverse Voltage vs.Junction Temperature160140120100806040200–40–20020406080100120140160× 100 (%)Holding Current (RGK = rkΩ)Holding Current (RGK = 1kΩ)Typical ExampleIGT(25°C)IH(1kΩ)13µA1.6mA# 1 59µA1.8mA# 2Typical Example# 2200100Tj = 25°C010–1235710023571012357102Gate to Cathode Resistance (kΩ)Junction Temperature (°C)
Rev.1.00, Mar.01.2005, page 5 of 7
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CR05AS-8
Gate Trigger Current vs.Gate Current Pulse Width1037543210275432× 100 (%)# 1# 2Typical ExampleIGT(25°C)# 110µA# 266µAGate Trigger Current (tw)Gate Trigger Current (DC)Tj = 25°C1011002345710123457102Gate Current Pulse Width (µs)
Rev.1.00, Mar.01.2005, page 6 of 7
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CR05AS-8
Package Dimensions
JEITA Package CodeSC-62RENESAS CodePLZZ0004CA-APackage NameUPAK / UPAKVMASS[Typ.]0.050gUnit: mm4.5 ± 0.11.51.53.00.8 Min0.44 Max(0.4)0.53 Max0.48 Max(2.5)φ12.5 ± 0.14.25 Max0.41.8 Max1.5 ± 0.10.44 Max(1.5)(0.2)
Order Code
Lead form
Standard packing
Quantity
Standard order code
Standard order code example CR05AS-8-ET14
Surface-mounted type Taping 4000Type name – ET +Direction (1 or 2) + 4 Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Mar.01.2005, page 7 of 7
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