元器件交易网www.cecb2b.comSi4562DYVishay SiliconixN- and P-Channel 2.5-V (G-S) MOSFETPRODUCTSUMMARYVDS (V)N-Channel20rDS(on) (W)0.025 @ VGS = 4.5 V0.035 @ VGS = 2.5 V0.033 @ VGS = –4.5 V0.050 @ VGS = –2.5 VID (A)\"7.1\"6.0\"6.2\"5.0P-Channel–20D1D1S2SO-8S1G1S2G21234Top ViewS1N-Channel MOSFETD2D28765D1D1D2D2G1G2P-Channel MOSFETABSOLUTEMAXIMUMRATINGS(TA=25_CUNLESSOTHERWISENOTED)ParameterDrain-Source VoltageGate-Source VoltageContinuous Drain Current (TJ = 150_C)aPulsed Drain CurrentContinuous Source Current (Diode Conduction)aMaximum Power DissipationaOperating Junction and Storage Temperature RangeTA = 25_CTA = 70_CTA = 25_CTA = 70_CSymbolVDSVGSIDIDMISPDTJ, TstgN-Channel20\"12\"7.1\"5.7\"401.72.01.3P-Channel–20\"12\"6.2\"4.9\"40–1.72.01.3UnitVAW_C–55 to 150THERMALRESISTANCERATINGSParameterMaximum Junction-to-AmbientaNotesa.Surface Mounted on FR4 Board, t v 10 sec.Document Number: 70717S-54940—Rev. A, 29-Sep-97www.vishay.com S FaxBack 408-970-5600SymbolRthJAN- or P-Channel62.5Unit_C/W2-1元器件交易网www.cecb2b.comSi4562DYVishay SiliconixSPECIFICATIONS(TJ=25_CUNLESSOTHERWISENOTED)ParameterStaticGate Threshold VoltageVGS(th)VDS = VGS, ID = 250 mAVDS = VGS, ID = –250 mAVDS = 0 V, VGS = \"12 VVDS = 20 V, VGS = 0 VZGVlDiCZero Gate Voltage Drain CurrentIDSSVDS = –20 V, VGS = 0 VVDS = 20 V, VGS = 0 V, TJ = 55_CVDS = –20 V, VGS = 0 V, TJ = 55_COn-State Drain CurrentbID(on)VDS w 5 V, VGS = 4.5 VVDS v –5 V, VGS = –4.5 VVGS = 4.5 V, ID = 7.1 AbDiSOSRiDrain-Source On-State ResistanceSymbolTest ConditionMinTypaMaxUnitN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-ChN-ChP-Ch0.6–0.6\"100\"1001–15–520–200.0190.0270.0250.04027201.2–1.20.0250.0330.0350.050VGate-Body LeakageIGSSnAmAArDS(on)VGS = –4.5 V, ID = –6.2 AVGS = 2.5 V, ID = 6.0 AVGS = –2.5 V, ID = –5.0 AWForward TransconductancebgfsVDS = 10 V, ID = 7.1 AVDS = –10 V, ID = –6.2 AIS = 1.7 A, VGS = 0 VIS = –1.7 A, VGS = 0 VSDiode Forward VoltagebVSDVDynamicaTotal Gate ChargeQgN-ChNChN-ChannellVDS =10V VGS = 4.5 V, I=45VID = 7.1 A=71ADS= 10 V, P-ChannelVDS = –10 V, VGS = –4.5 V, ID = –6.2 AP-ChN-ChP-ChN-ChP-ChN-ChNChN-ChannellVDD = 10 V, RL =10 WID^ 1 A, V1AVGEN = 4.5 V, R=45VRG = 6 =6WP-ChannelVDD = –10 V, RL = 10 WID^ –1 A, V1AVGEN = –4.5 V, R=45VRG = 6 =6WP-ChN-ChP-ChN-ChP-ChN-ChP-ChIF = 1.7 A, di/dt = 100 A/msIF = –1.7 A, di/dt = 100 A/msN-ChP-Ch25226.5743.5402740329095404540406050605015015060708080ns5035nCCGate-Source ChargeQgsGate-Drain ChargeQgdTurn-On Delay Timetd(on)Rise TimetrTurn-Off Delay Timetd(off)Fall TimetfSource-Drain Reverse Recovery TimetrrNotesa.For design aid only; not subject to production testing.b.Pulse test; pulse width v300 ms, duty cycle v2%.www.vishay.com S FaxBack 408-970-56002-2Document Number: 70717S-54940—Rev. A, 29-Sep-97元器件交易网www.cecb2b.comSi4562DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)Output Characteristics40VGS = 5 thru 3 V30ID– Drain Current (A)ID– Drain Current (A)40N-CHANNELTransfer Characteristics2.5 V30202 V101, 1.5 V000.51.01.52.02.53.03.54.02010TC = 125_C25_C–55_C000.51.01.52.02.53.0VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)On-Resistance vs. Drain Current0.104000CapacitancerDS(on)– On-Resistance (W)0.08C – Capacitance (pF)3200Ciss24000.060.04VGS = 2.5 V0.02VGS = 4.5 V001020ID – Drain Current (A)30401600Coss800Crss0048121620VDS – Drain-to-Source Voltage (V)5VDS = 10 VID = 7.1 AVGS– Gate-to-Source Voltage (V)Gate Charge1.6On-Resistance vs. Junction TemperatureVGS = 4.5 VID = 7.1 A3rDS(on)– On-Resistance (W)(Normalized)051015202541.41.221.010.800.6–50–250255075100125150Qg – Total Gate Charge (nC)TJ – Junction Temperature (_C)Document Number: 70717S-54940—Rev. A, 29-Sep-97www.vishay.com S FaxBack 408-970-56002-3元器件交易网www.cecb2b.comSi4562DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)Source-Drain Diode Forward Voltage400.10N-CHANNELOn-Resistance vs. Gate-to-Source VoltageID = 7.1 AIS– Source Current (A)TJ = 150_C10TJ = 25_CrDS(on)– On-Resistance (W)0.080.060.040.02100.20.40.60.81.01.21.40012345VSD – Source-to-Drain Voltage (V)VGS – Gate-to-Source Voltage (V)0.4Threshold Voltage30Single Pulse Power0.2VGS(th)Variance (V)24–0.2Power (W)–0.0ID = 250 mA1812–0.46–0.6–50–25025507510012515000.010.101.00Time (sec)10.00TJ – Temperature (_C)21Duty Cycle = 0.5Normalized Effective TransientThermal ImpedanceNormalized Thermal Transient Impedance, Junction-to-Ambient0.2Notes:0.10.10.050.02Single Pulse0.0110–410–310–210–11PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 62.5_C/W3. TJM – TA = PDMZthJA(t)4. Surface Mounted1030Square Wave Pulse Duration (sec)www.vishay.com S FaxBack 408-970-56002-4Document Number: 70717S-54940—Rev. A, 29-Sep-97元器件交易网www.cecb2b.comSi4562DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)Output Characteristics40VGS = 5, 4.5, 4, 3.5 V32ID– Drain Current (A)3 VID– Drain Current (A)3225_C24125_C40TC = –55_CP-CHANNELTransfer Characteristics242.5 V162 V81.5 V0012345168001234VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)On-Resistance vs. Drain Current0.104500CapacitancerDS(on)– On-Resistance (W)0.08C – Capacitance (pF)3600Ciss0.06VGS = 2.5 V27000.04VGS = 4.5 V18000.02900CossCrss008162432400048121620ID – Drain Current (A)VDS – Drain-to-Source Voltage (V)5VDS = 10 VID = 6.2 AGate Charge1.6On-Resistance vs. Junction TemperatureVGS– Gate-to-Source Voltage (V)3rDS(on)– On-Resistance (W)(Normalized)41.4VGS = 4.5 VID = 6.2 A1.221.010.8005101520250.6–50–250255075100125150Qg – Total Gate Charge (nC)TJ – Junction Temperature (_C)Document Number: 70717S-54940—Rev. A, 29-Sep-97www.vishay.com S FaxBack 408-970-56002-5元器件交易网www.cecb2b.comSi4562DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)Source-Drain Diode Forward Voltage400.10P-CHANNELOn-Resistance vs. Gate-to-Source VoltageTJ = 150_C10rDS(on)– On-Resistance (W)0.08IS– Source Current (A)0.06ID = 6.2 ATJ = 25_C0.040.02100.20.40.60.81.01.21.41.60012345VSD – Source-to-Drain Voltage (V)VGS – Gate-to-Source Voltage (V)0.6Threshold Voltage30Single Pulse Power24VGS(th)Variance (V)0.3ID = 250 mAPower (W)18120.06–0.3–50–25025507510012515000.010.101.00Time (sec)10.00TJ – Temperature (_C)21Duty Cycle = 0.5Normalized Effective TransientThermal ImpedanceNormalized Thermal Transient Impedance, Junction-to-Ambient0.2Notes:0.10.10.050.02Single Pulse0.0110–410–310–210–1PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 62.5_C/W3. TJM – TA = PDMZthJA(t)4. Surface Mounted11030Square Wave Pulse Duration (sec)www.vishay.com S FaxBack 408-970-56002-6Document Number: 70717S-54940—Rev. A, 29-Sep-97