UZS1060N

N-Channel AdvancedPower MOSFETMOSFETFeatures• 100V/40A,RDS (ON)=21mΩ(tpy.)@VGS=10V•Super High Dense Cell Design•100% avalanche tested•Lead Free and Green Devices Available(RoHS Compliant)Pin DescriptionTO-220 TO-220FTO-263 TO-247Applications•Switching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolVDSSVGSSTJTSTGISIDPIDPDRθJC③ParameterDrain-Source VoltageGate-Source VoltageMaximum Junction TemperatureStorage Temperature RangeDiode Continuous Forward CurrentTC=25°CTC=25°CTC=25°CTC=100°CTC=25°CTC=100°CRating100±25175-55 to 17540①UnitCommon Ratings(TA=25°C Unless Otherwise Noted)V°C°CAMounted on Large Heat Sink300μs PulseDrain Current TestedContinuousDrain CurrentMaximum Power DissipationThermal Resistance-Junction to CaseAvalanche Energy, Single Pulsed16040AAW°C/W②27111561.35Drain-Source Avalanche RatingsEAS220mJRev.A–FEB.,2011Electrical CharacteristicsSymbolStatic CharacteristicsBVDSSIDSSVGS(th)IGSSRDS(ON)④(TA=25°C Unless Otherwise Noted)RU1H35RMin.Typ.Max.ParameterTest ConditionUnitDrain-SourceBreakdown VoltageZero Gate Voltage Drain CurrentGate Threshold VoltageGate Leakage CurrentDrain-Source On-state ResistanceVGS=0V, IDS=250µAVDS=100V, VGS=0VTJ=85°CVDS=VGS, IDS=250µAVGS=±25V, VDS=0VVGS= 10V, IDS=16A100 110234±1002125VµAVnAmΩDiode CharacteristicsVSDtrrQrr④Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge⑤ISD=16A, VGS=0VISD=16A, dlSD/dt=100A/µs0.8100430 1.2VnsnCΩpFDynamic CharacteristicsRGGate ResistanceCissCossCrsstd(ON)trtd(OFF)tfVGS=0V,VDS=0V,F=1MHzVGS=0V,VDS=25V,Frequency=1.0MHz2.8210025011522766023Input CapacitanceOutput CapacitanceReverse Transfer CapacitanceTurn-on Delay TimeTurn-on Rise TimeTurn-off Delay TimeTurn-off Fall Time⑤VDD=50V, RL=30Ω,IDS=16A, VGEN=10V,RG=4.7ΩnsGate Charge CharacteristicsQgQgsQgdNotes:Total Gate ChargeGate-Source ChargeGate-Drain ChargeVDS=80V, VGS=10V,IDS=16A441021nCPulse width limited by safe operating area.Calculated continuouscurrent based on maximum allowablejunction temperature.Limited by TJmax, IAS=21A, VDD =48V, RG =50Ω , Starting TJ = 25°C.Pulse test ;Pulse width≤300µs, duty cycle≤2%.Guaranteed by design, not subject to production testing.2Rev.A–FEB.,2011Typical CharacteristicsPowerDissipationDrain CurrentTj- Junction Temperature(°C)ID- Drain Current (A)Tj- Junction Temperature(°C)Safe Operation AreaPtot-Power(W)Thermal Transient ImpedanceVDS- Drain-Source Voltage (V)3Rev.A–FEB.,2011Normalized Effective TransientSquare Wave Pulse Duration(sec)ID- Drain Current (A)Typical CharacteristicsOutput CharacteristicsDrain-SourceOn ResistanceVDS- Drain-Source Voltage (V)RDS(ON)- On Resistance (mΩ)ID- Drain Current (A)ID-DrainCurrent (A) Drain-Source On ResistanceGate Threshold VoltageVGS-Gate-Source Voltage (V)Normalized Threshold VoltageTj- Junction Temperature (°C)4Rev.A–FEB.,2011RDS(ON)- On- Resistance (m)Typical CharacteristicsDrain-Source On ResistanceSource-Drain Diode ForwardNormalized On ResistanceTj- Junction Temperature (°C)IS- Source Current (A)VSD- Source-Drain Voltage (V)CapacitanceGate ChargeVDS- Drain-Source Voltage (V)VGS- Gate-Source Voltage (V)C- Capacitance (pF)QG- Gate Charge (nC)5Rev.A–FEB.,2011Avalanche Test Circuitand WaveformsSwitching Time Test Circuit and Waveforms6Rev.A–FEB.,2011Ordering and Marking InformationRU1H35Package (Available)R :TO220Operating Temperature RangeC :-55 to 175 ºCAssembly MaterialG : Green & Lead FreePackagingT : TUBE7Rev.A–FEB.,2011Package InformationTO-220FB-3LSYMBOLAA1A2bb2CDD1DEPEE1E2MMMIN4.401.272.350.771.230.4815.409.000.059.70-9.80NOM4.571.302.40--0.5015.609.100.109.908.7010.00MAX4.701.332.500.901.360.5215.809.200.2010.10-10.20MIN0.1730.0500.0930.0300.0480.0190.6060.3540.0020.382-0.386INCHNOM0.1800.0510.094--0.0200.6140.3580.0040.3890.3430.394MAX0.1850.0520.0980.0350.0540.0210.6220.3620.0080.398-0.401SYMBOLØp1ee1H1LL1L2ØpQMMMIN1.40NOM1.502.54BSC5.08BSC6.4012.75-3.572.735°1°6.50--2.50REF.3.602.807°3°3.632.879°5°0.1410.1075°1°6.6013.173.950.2520.502-MAX1.60MIN0.055INCHNOM0.0590.1BSC0.2BSC0.256--0.098REF.0.1420.1107°3°0.1430.1139°5°0.2600.5190.156MAX0.063θ1θ2ALL DIMENSIONS REFER TO JEDEC STANDARDDO NOT INCLUDE MOLD FLASH OR PROTRUSIONS8Rev.A–FEB.,20119Rev.A–FEB.,2011