BCP 29资料

• Complementary types: BCP 28/48 (PNP)

432C(2,4)B(1)1VPS05163E(3)EHA00009TypeBCP 29 BCP 49

Maximum RatingsParameter

MarkingBCP 29 BCP 49

1 = B 1 = B

Pin Configuration2 = C 2 = C

3 = E 3 = E

4 = C 4 = C

PackageSOT-223 SOT-223

SymbolVCEOVCBOVEBO

BCP 29304010

BCP 49608010

UnitV

Collector-emitter voltageCollector-base voltageEmitter-base voltage

DC collector currentPeak collector currentBase currentPeak base current

Total power dissipation, TS = 124 °CJunction temperatureStorage temperatureThermal Resistance

ICICMIBIBMPtotTjTstg

5008001002001.5150-65 ... 150

mAmA

W°C

Junction ambient 1)Junction - soldering point

RthJARthJS

≤75≤17

K/W

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

1Oct-20-1999

BCP 29, BCP 49Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterSymbolValues

min.

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

Collector-base breakdown voltage IC = 100 µA, IB = 0

Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °CEmitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 VDC current gain 1) IC = 10 mA, VCE = 5 VDC current gain 1) IC = 100 mA, VCE = 5 VDC current gain 1) IC = 500 mA, VCE = 5 V

BCP 29BCP 49 BCP 29BCP 49 BCP 29BCP 49 BCP 29BCP 49

1) Pulse test: t ≤ 300µs, D = 2%

Unit

max. -- --- 100100 1010100 -- -- -- ----nA-µAnAV

typ. -- --- -- --- -- -- -- --

V(BR)CEO

3060

BCP 29BCP 49 BCP 29BCP 49

V(BR)EBO

BCP 29BCP 49 BCP 29BCP 49

IEBOhFEICBOICBOV(BR)CBO

408010 -- --- 40002000

hFE

100004000

hFE

2000010000

hFE

40002000

2Oct-20-1999

BCP 29, BCP 49Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterSymbolValues

min.

DC Characteristics

Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mAAC CharacteristicsTransition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHzCollector-base capacitance VCB = 10 V, f = 1 MHz

Ccb

-6.5

-fT

-200

-VBEsat

--1.5

VCEsat

--1

typ.

max.

Unit

V

MHzpF

1) Pulse test: t ≤ 300µs, D = 2%

3Oct-20-1999

Total power dissipation Ptot = f (TA*;TS)* Package mounted on epoxy

1.6BCP 29/49EHP00250WPtot1.41.21.00.80.6TATS0.40.20050100˚C150TA;TSTransition frequency fT = f (IC)VCE = 5V

103BCP 29/49EHP00252fTMHz1025101100101102mA103ΙCBCP 29, BCP 49Collector cutoff current ICBO = f (TA)VCB = VCEmax

104BCP 29/49EHP00251ΙnACBO103max102typ101100050100˚C150TAPermissible pulse loadPtotmax / PtotDC = f (tp)

103BCP 29/49EHP00253PtotmaxtP5ptotDCD=tpTT102D=050.0050.010.020.050.10.21010.5510010-610-510-410-310-2s100tp4Oct-20-1999

DC current gain hFE = f (IC)VCE = 5V

106BCP 29/49EHP00255h5FE˚C10512525˚C5-55˚C104510310-1100101102mA103ΙCCollector-base capacitance CCB = f (VCBO)Emitter-base capacitance CEB = f (VEBO)

10BCP 29/49EHP00257CCEB0(CB0)pFCCB05CEB0010-1100V101VEB0(VCB0)BCP 29, BCP 49Collector-emitter saturation voltageIC = f (VCEsat), hFE = 1000

103BCP 29/49EHP00256ΙmAC150˚C25˚C102-50˚C5101510000.51.0V1.5VCEsatBase-emitter saturation voltageIC = f (VBEsat), hFE = 1000

103BCP 29/49EHP00258ΙmAC15025˚C102-50˚˚CC5101510001.02.0V3.0VBEsat5Oct-20-1999